Datasheet > 06F7752

06F7752

更新时间： 2022-01-22 05:48:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	135K
描述
TRANSISTOR MIT DRAIN STROM MESSAUSGANG

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06F7752 数据手册

IRCZ44

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

60 ––– –––

––– 0.060 ––– V/°C Reference to 25°C, I_D= 1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

R_DS(ON)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 0.028

2.0 ––– 4.0

18 ––– –––

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 95

––– ––– 27

––– ––– 46

––– 19 –––

––– 120 –––

––– 55 –––

––– 86 –––

Ω

V_GS= 10V, I_D= 31A

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 31A

V_DS= 60V, V_GS= 0V

V_DS= 48V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Forward Transconductance

I_DSS

I_GSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -20V

Q_g

I_D= 52A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_DS= 48V

V_GS= 10V, See Fig. 6 and 13

V_DD= 30V

RiseTime

I_D= 52A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 9.1Ω

R_D= 0.54Ω, See Fig. 10

Between lead,

6 mm (0.25in.)

from package

and center of

L_D

L_C

Internal Drain Inductance

Internal Source Inductance

––– 4.5 –––

––– 7.5 –––

die contact

C_iss

C_oss

C_rss

Input Capacitance

––– 2500 –––

––– 1200 –––

––– 200 –––

V_GS= 0V

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

Current Sensing Ratio

ƒ = 1.0MHz, See Fig. 5

2460 ––– 2720 ––– I_D= 52A, V_GS= 10V

C_oss

Output Capacitance of Sensing Cells

––– 9.0 –––

V_GS= 0V, V_DS= 25V, ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFETsymbol

I_S

––– ––– 50*

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

––– ––– 210

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– ––– 2.5

––– 140 300

––– 1.2 2.8

T_J= 25°C, I_S= 52A, V_GS= 0V

T_J= 25°C, I_F= 52A

Q_rr

t_on

di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

I_SD≤ 52A, di/dt ≤ 250A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V_DD= 25V, starting T_J= 25°C, L = 0.013mH

R_G= 25Ω, I_AS= 52A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

C-14

123 4 5 6

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