Datasheet > ES1AF

ES1AF

更新时间： 2025-08-11 18:50:15

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		/
页数	文件大小	规格书
2页	546K
描述
IF(A):1.000; VRRM(V):50; IFSM(A):30; VF(V):0.95; @IF(A):1.0; IR@25℃(uA):5; trr(ns):35; OUTLINE:SMAF;

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中文翻译

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数据手册

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ES1AF 数据手册

ES1AF THRU ES1JF

Surface Mount Superfast Recovery Rectifier

Reverse Voltage – 50 to 600 V

Forward Current – 1 A

星合子

XINGHE ELECTRONICS

SMAF

FEATURES

Cathode Band

Top View

• For surface mounted applications

• Low profile package

0.110(2.80)

0.094(2.40)

0.059(1.50)

0.051(1.30)

• Glass Passivated Chip Juntion

• Superfast reverse recovery time

• Lead free in comply with EU RoHS 2011/65/EU directives

0.150(3.80)

0.128(3.25)

0.012(0.30)

0.006(0.15)

0.055(1.40)

0.035(0.90)

MECHANICAL DATA

0.047(1.20)

0.028(0.70)

• Case: SMAF

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 27mg 0.00086oz

0.199(5.05)

0.179(4.40)

Dimensions in inches and (millimeters)

AbsoluteMaximumRatingsandCharacteristics

Ratings at 25°Cambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbols

V_RRM

ES1AF E S1BF E S1CF E S1DF E S1EF E S1GF E S1JF

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Units

100

150

105

150

200

140

200

300

210

300

400

280

400

600

420

600

V_RMS

Maximum DC Blocking Voltage

V_DC

100

Maximum Average Forward Rectified Current

at TL = 100 °C

I_F(AV)

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

Maximum Forward Voltage at 1 A

V_F

I_R

1.25

1.7

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 °C

Ta =125 °C

100

μA

Typical Junction Capacitance

at V_R=4V, f=1MHz

C_j

Maximum Reverse Recovery Time

at I_F=0.5A, I_R=1A, I_rr=0.25A

t_rr

Operating and Storage Temperature Range

T_j, T_stg

-55 ~ +150

°C

GAOMI XINGHE ELECTRONICS CO.,LTD.

WWW.SDDZG.COM

中文翻译

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