Datasheet > -SP12CFA016ME-PD98G68T

-SP12CFA016ME-PD98G68T

更新时间： 2023-09-03 20:40:01

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
33页	10266K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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B0-SP12CFA016ME-PD98G68T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Boost Switch

Static

11,2

1,8

17,1

20,8⁽¹⁾

r_DS(on)

Drain-source on-state resistance

125

150

mΩ

23,2

V_GS(th)

I_GSS

I_DSS

r_g

Gate-source threshold voltage

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

Internal gate resistance

Gate charge

V_DS= V_GS

0,023

2,5

3,6

500

µA

Ω

1200

0,85

236

6714

258

Q_g

-4/15

800

C_iss

C_oss

C_rss

V_SD

Short-circuit input capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Diode forward voltage

f = 100 kHz

1000

4,6

Thermal

λ_paste= 5,2 W/mK

(PTM)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,69

K/W

R_th(j-s)

13,4

12,08

11,92

7,02

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

6,73

6,47

R_gon= 2 Ω

R_goff= 2 Ω

50,92

55,59

57,21

22,65

26,36

26,92

0,712

0,665

0,656

0,2

t_d(off)

Turn-off delay time

Fall time

125

150

0/15

700

t_f

125

150

Q_rFWD=0,587 µC

Q_rFWD=0,634 µC

Q_rFWD=0,648 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

0,218

0,227

05 May. 2023 / Revision 2

1 2 3 456 7 8...33

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