Datasheet > ZXTP19040CGQ

ZXTP19040CGQ

更新时间： 2023-12-06 20:11:48

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	840K
描述
PNP, 40V, 3A, SOT223

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ZXTP19040CGQ 数据手册

ZXTP19040CGQ

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 9)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Conditions

-40

-6









-100

-50

-100

BV_CBO

BV_CEO

BV_EBO

I_C= -100A

I_C= -10mA

I_E= -50A





nA V_CB= -40V, I_E= 0

A

Collector-Base Cutoff Current

I_CBO

I_EBO

V_CB= -40V, I_E= 0, T_A= +150°C

V_EB= -6V, I_C= 0

Emitter-Base Cutoff Current



ON CHARACTERISTICS (Note 9)

220

200

100











400



-150

-200

-500

-1.0

V_CE= -1V, I_C= -0.5A

V_CE= -1V, I_C= -1A

V_CE= -1V, I_C= -3A

I_C= -0.5A, I_B= -5mA

I_C= -1A, I_B= -10mA

I_C= -3A, I_B= -0.3A

I_C= -1A, I_B= -0.1A

V_CE= -2V, I_C= -1A

DC Current Gain



h_FE

Collector-Emitter Saturation Voltage

V_CE(SAT)

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

V_BE(SAT)

V_BE(ON)



SMALL SIGNAL CHARACTERISTICS

V_CE= -10V, I_C= -100mA,

f = 100MHz

Transition Frequency

150

MHz



f_T

Output Capacitance

Input Capacitance

SWITCHING CHARACTERISTICS

Turn-On Time



C_obo

C_ibo

V_CB= -10V, f = 1MHz

V_CB= -5V, f = 1MHz

150



t_ON

t_D

V_CC= -10V, I_C= -2A,

I_B1= -200mA

Delay Time

Rise Time

t_R

Turn-Off Time

180

146

t_OFF

t_S

V_CC= -10V, I_C= -2A,

I_B1= -I_B2= -200mA

Storage Time

Fall Time

t_F

Note:

9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

4 of 7

www.diodes.com

May 2019

ZXTP19040CGQ

Datasheet Number: DS40677 Rev. 1 - 2

1 2 345 6 7

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