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ZXTN649FTA PDF预览

ZXTN649FTA

更新时间: 2024-01-29 08:04:58
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
7页 238K
描述
Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3

ZXTN649FTA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.75最大集电极电流 (IC):3 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.725 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXTN649FTA 数据手册

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A Product Line of  
Diodes Incorporated  
ZXTN649F  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
35  
25  
7
Unit  
V
V
V
Continuous Collector Current  
Peak Pulse Current  
3
A
6
A
ICM  
Base Current  
500  
mA  
IB  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
PD  
Value  
725  
Unit  
mW  
°C/W  
°C/W  
°C  
Power Dissipation  
(Note 5)  
(Note 5)  
(Note 6)  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Leads  
Operating and Storage Temperature Range  
172  
RθJA  
RθJL  
79  
-55 to +150  
TJ, TSTG  
ESD Ratings (Note 7)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
8,000  
400  
Unit  
V
V
JEDEC Class  
3B  
C
Notes:  
5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is  
measured when operating in a steady-state condition.  
6. Thermal resistance from junction to solder-point (at the end of collector lead).  
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
ZXTN649F  
Document number: DS31900 Rev. 3 - 2  
2 of 7  
www.diodes.com  
January 2013  
© Diodes Incorporated  

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