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ZXM62N03E6TA PDF预览

ZXM62N03E6TA

更新时间: 2024-01-01 01:40:14
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
7页 191K
描述
Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN

ZXM62N03E6TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-23, 6 PINReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.09
Is Samacsys:N其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):3.2 A最大漏源导通电阻:0.11 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXM62N03E6TA 数据手册

 浏览型号ZXM62N03E6TA的Datasheet PDF文件第2页浏览型号ZXM62N03E6TA的Datasheet PDF文件第3页浏览型号ZXM62N03E6TA的Datasheet PDF文件第4页浏览型号ZXM62N03E6TA的Datasheet PDF文件第5页浏览型号ZXM62N03E6TA的Datasheet PDF文件第6页浏览型号ZXM62N03E6TA的Datasheet PDF文件第7页 
ZXM62N03E6  
30V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS=30V; RDS(ON)=0.11; ID=3.2A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilise a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
SOT23-6  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23-6 package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
Top View  
ZXM62N03E6TA  
ZXM62N03E6TC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
13  
DEVICE MARKING  
2N03  
PROVISIONAL ISSUE A - MAY 1999  
97  

ZXM62N03E6TA 替代型号

型号 品牌 替代类型 描述 数据表
ZXMN3A01E6TA DIODES

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