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ZTE2-TAP PDF预览

ZTE2-TAP

更新时间: 2024-02-06 13:47:54
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
6页 145K
描述
Zener Diode, 2.15V V(Z), 6.98%, 0.3W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2

ZTE2-TAP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-35包装说明:O-LALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.82其他特性:LOW NOISE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.3 W
认证状态:Not Qualified标称参考电压:2 V
表面贴装:NO技术:ZENER
端子面层:Tin/Silver (Sn/Ag)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:6.98%工作测试电流:5 mA
Base Number Matches:1

ZTE2-TAP 数据手册

 浏览型号ZTE2-TAP的Datasheet PDF文件第2页浏览型号ZTE2-TAP的Datasheet PDF文件第3页浏览型号ZTE2-TAP的Datasheet PDF文件第4页浏览型号ZTE2-TAP的Datasheet PDF文件第5页浏览型号ZTE2-TAP的Datasheet PDF文件第6页 
ZTE Series  
Vishay Semiconductors  
VISHAY  
Voltage Stabilizers  
Features  
• Silicon Stabilizer Diodes  
• Monolithic integrated analog circuits designed for  
small power stabilizer and limitation circuits, pro-  
viding low dynamic resistance and high-quality  
stabilization performance as well as low noise. In  
the reverse direction, these devices show the  
behavior of forward-biased silicon diodes.  
94 9367  
• The end of the ZTE device marked with the cath-  
ode ring is to be connected: ZTE1.5 and ZTE2 to  
the negative pole of the supply voltage; ZTE2.4  
thru ZTE5.1 to the positive pole of the supply volt-  
age.  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: approx. 0.13 g  
Packaging codes/options:  
TR / 10k per 13 " reel (52 mm tape), 30k/box  
TAP / 10k per Ammo tape, (52 mm tape), 30k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
100  
Unit  
Operating Current (see Table  
"Characteristics")  
Inverse Current  
I
mA  
W
F
1)  
Power dissipation  
P
tot  
300  
Junction temperature  
Storage temperature range  
T
150  
°C  
°C  
J
T
- 55 to + 150  
S
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
Symbol  
Min  
Typ.  
Value  
Unit  
-4  
Temperature Coefficient of the  
stabilized voltage  
I = 5 mA  
ZTE1.5  
α
- 26  
Z
VZ  
10 /°C  
-4  
ZTE2  
ZTE2.4  
ZTE5.1  
α
α
- 26  
- 34  
- 34  
VZ  
VZ  
VZ  
θJA  
10 /°C  
-4  
10 /°C  
-4  
α
10 /°C  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
400  
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case  
Document Number 85813  
Rev. 1.4, 27-Nov-03  
www.vishay.com  
1

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