ZTE Series
Vishay Semiconductors
VISHAY
Voltage Stabilizers
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits, pro-
viding low dynamic resistance and high-quality
stabilization performance as well as low noise. In
the reverse direction, these devices show the
behavior of forward-biased silicon diodes.
94 9367
• The end of the ZTE device marked with the cath-
ode ring is to be connected: ZTE1.5 and ZTE2 to
the negative pole of the supply voltage; ZTE2.4
thru ZTE5.1 to the positive pole of the supply volt-
age.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13 g
Packaging codes/options:
TR / 10k per 13 " reel (52 mm tape), 30k/box
TAP / 10k per Ammo tape, (52 mm tape), 30k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
100
Unit
Operating Current (see Table
"Characteristics")
Inverse Current
I
mA
W
F
1)
Power dissipation
P
tot
300
Junction temperature
Storage temperature range
T
150
°C
°C
J
T
- 55 to + 150
S
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
Min
Typ.
Value
Unit
-4
Temperature Coefficient of the
stabilized voltage
I = 5 mA
ZTE1.5
α
- 26
Z
VZ
10 /°C
-4
ZTE2
ZTE2.4
ZTE5.1
α
α
- 26
- 34
- 34
VZ
VZ
VZ
θJA
10 /°C
-4
10 /°C
-4
α
10 /°C
1)
Thermal resistance junction to
ambient air
R
°C/W
400
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Document Number 85813
Rev. 1.4, 27-Nov-03
www.vishay.com
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