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ZTE1.5/TAP PDF预览

ZTE1.5/TAP

更新时间: 2022-12-01 22:46:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 145K
描述
Zener Diode, 1.45V V(Z), 6.9%, 0.3W,

ZTE1.5/TAP 数据手册

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ZTE Series  
Vishay Semiconductors  
VISHAY  
Voltage Stabilizers  
Features  
• Silicon Stabilizer Diodes  
• Monolithic integrated analog circuits designed for  
small power stabilizer and limitation circuits, pro-  
viding low dynamic resistance and high-quality  
stabilization performance as well as low noise. In  
the reverse direction, these devices show the  
behavior of forward-biased silicon diodes.  
94 9367  
• The end of the ZTE device marked with the cath-  
ode ring is to be connected: ZTE1.5 and ZTE2 to  
the negative pole of the supply voltage; ZTE2.4  
thru ZTE5.1 to the positive pole of the supply volt-  
age.  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: approx. 0.13 g  
Packaging codes/options:  
TR / 10k per 13 " reel (52 mm tape), 30k/box  
TAP / 10k per Ammo tape, (52 mm tape), 30k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
100  
Unit  
Operating Current (see Table  
"Characteristics")  
Inverse Current  
I
mA  
W
F
1)  
Power dissipation  
P
tot  
300  
Junction temperature  
Storage temperature range  
T
150  
°C  
°C  
J
T
- 55 to + 150  
S
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
Symbol  
Min  
Typ.  
Value  
Unit  
-4  
Temperature Coefficient of the  
stabilized voltage  
I = 5 mA  
ZTE1.5  
α
- 26  
Z
VZ  
10 /°C  
-4  
ZTE2  
ZTE2.4  
ZTE5.1  
α
α
- 26  
- 34  
- 34  
VZ  
VZ  
VZ  
θJA  
10 /°C  
-4  
10 /°C  
-4  
α
10 /°C  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
400  
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case  
Document Number 85813  
Rev. 1.4, 27-Nov-03  
www.vishay.com  
1

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