Low VF SMD Bridge Rectifiers
Z4GP206L-HF Thru. Z4GP210L-HF
Reverse Voltage: 600 to 1000 Volts
Forward Current: 2.0 A
RoHS Device
ABS(Z4)
Halogen free
0.213(5.40)
0.205(5.20)
Features
0.132(3.35)
0.128(3.25)
- Intermal structure with GPRC
(Glass passivated rectifier chip) inside.
+
-
0.232(5.90)
0.224(5.70)
- Lead less chip form, no lead damage.
- Low power loss, High efficiency.
- High current capability.
~
~
0.047(1.20)
0.039(1.00)
R0.25±0.05
0.037(0.95)
0.033(0.85)
- Plastic package has Underwriters Laboratory
Flammability Classification 94V-0 .
0.053(1.35)
0.041(1.05)
Mechanical data
Dimensions in inches and (millimeter)
- Case: Packed with FRP substrate and epoxy underfilled.
- Terminals: Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, method 2026.
Circuit Diagram
4
1
- Polarity: Laser marking symbols
- Weight: 0.11 gram
-
+
~
~
3
2
Abolute Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Z4GP206L-HF
Z4GP208L-HF
Z4GP210L-HF
1000
Parameter
Repetitive Peak Reverse Voltage
Average Forward Current
Unit
VRRM
I(AV)
600
800
2.0
V
A
Peak Forward Surge Current, 8.3mS single
half sine-wave, superimposed on rated load
(JEDEC Method)
IFSM
60
A
Operating Temperature Range
Storage Temperature Range
TJ
-55 to +175
-55 to +175
°C
°C
TSTG
Electrical Characteristics (at TA=25°C unless otherwise noted)
Typ.
Symbol
Min.
Max.
Parameter
Conditions
Unit
Forward Voltage
VF
IF = 2.0A
-
-
-
-
-
-
0.92
0.95
V
Repetitive peak reverse current
Current squared time
VR=Max. VRRM, Ta=25°C
t<8.3ms, Ta = 25°C
IRRM
0.08
14.9
35
5
-
uA
A2S
pF
I2t
-
Junction capacitance
VR=4V, f=1.0MHz
CJ
-
Junction to ambient (Note)
Junction to lead (Note)
Rth(JA)
Rth(JL)
80
°C/W
°C/W
Thermal resistance
-
20
Notes: 1. Mounted on P.C.B with 1.5*1.0mm copper pads..
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-JBR05
Comchip Technology CO., LTD.