Z01
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
Figure 8: On-state characteristics (maximum
values)
I (A)
TM
2
2
I
(A), I t (A s)
TSM
10.0
100.0
10.0
1.0
T
initial = 25°C
j
dI/dt limitation:
20A/µs
I
TSM
T
j
= T max.
j
1.0
Tj=max.
Vt0=0.95 V
Rd=420 mΩ
2
T
j
= 25°C
I
t
t
(ms)
V
(V)
p
TM
0.1
0.01
0.1
0.10
1.00
10.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [T ] / (dI/dt)c [T Specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
j
j
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
6
5
4
3
2
1
0
0.8
Z0109
Z0103
0.6
0.4
0.2
0.0
Z0107
Z0110
(dV/dt)c (V/µs)
T (°C)
j
0.1
1.0
10.0
100.0
0
25
50
75
100
125
Figure 11: SOT-223 Thermal resistance junction
to ambient versus copper surface under tab
(printed circuit board FR4, copper thickness:
35 µm)
R
(°C/W)
th(j-a)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
S(cm²)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
4/8