Z0110NA1AA2

更新时间： 2024-01-19 11:27:46

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅三端双向交流开关
页数	文件大小	规格书
8页	79K
描述
1A TRIACS

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Z0110NA1AA2 数据手册

Z01

Figure 1: Maximum power dissipation versus

RMS on-state current (full cycle)

Figure 2: RMS on-state current versus case

temperature (full cycle)

P(W)

(A)

T(RMS)

1.50

1.2

1.0

0.8

0.6

0.4

0.2

0.0

= R

th(j-a) th(j-t)

(SOT-223)

1.25

1.00

0.75

0.50

0.25

th(j-a)

= R

th(j-l)

(TO-92)

(°C)

(A)

T(RMS)

amb

0.00

100

125

0.0

0.1

0.2

0.3

0.4 0.5

0.6

0.7

0.8

0.9

1.0

Figure 3: RMS on-state current versus ambient

temperature (full cycle)

Figure 4: Relative variation of thermal

impedance versus pulse duration

(A)

T(RMS)

K=[Z

]

th(j-a) th(j-a)

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.00

0.10

0.01

= 60°C/W

th(j-a)

(SOT-223)

Z01xxA

Z01xxN

= 150°C/W

th(j-a)

(TO-92)

t (s)

T or T

(°C)

tab

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

100

125

Figure 5: Relative variation of gate trigger

current, holding current and latching current

versus junction temperature (typical values)

Figure 6: Surge peak on-state current versus

number of cycles

, I , I [T ] / I , I , I [T =25°C]

(A)

TSM

2.5

2.0

1.5

1.0

0.5

0.0

t=20ms

One cycle

Non repetitive

initial = 25°C

& I

Repetitive

= 25°C

amb

T (°C)

Number of cycles

100

1000

-40

-20

100

120

140

3/8

1 234 5 6 7 8

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