WeEn Semiconductors
Z0109MA
4Q Triac
10. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max
Unit
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
10
15
25
15
15
mA
mA
mA
mA
mA
mA
mA
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 1 A; Tj = 25 °C; Fig. 10
-
-
-
-
10
1.6
1
mA
V
VT
VGT
on-state voltage
gate trigger voltage
1.3
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
-
V
Fig. 11
VD = 600 V; IT = 0.1 A; Tj = 125 °C
VD = 600 V; Tj = 125 °C
0.2
-
-
-
V
ID
off-state current
-
0.5
mA
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
50
-
-
-
-
V/μs
V/μs
dVcom/dt
VD = 400 V; Tj = 110 °C; dIcom/dt = 0.44
A/ms; IT = 1 A; gate open circuit
2
rate of change of
commutating voltage
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Z0109MA
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WeEn Semiconductors Co., Ltd. 2021. All rights reserved
Product data sheet
19 November 2021
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