Datasheet > Z0107MN0

Z0107MN0

更新时间： 2024-04-09 19:03:08

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
14页	317K
描述
Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface-mountable plastic package intended for applications requiring enhanced immunity to noise and direct interfacing to logic level ICs and low power gate drivers.

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Z0107MN0 数据手册

WeEn Semiconductors

Z0107MN0

4Q Triac

9. Characteristics

Table 6. Characteristics

Symbol

Static characteristics

I_GTgate trigger current

Parameter

Conditions

Min

Typ

Max

Unit

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 9

0.3

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 9

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 9

V_D= 12 V; I_T= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 9

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 10

V_D= 12 V; I_G= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 10

V_D= 12 V; I_G= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 10

V_D= 12 V; I_G= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 10

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 11

I_T= 1.4 A; T_j= 25 °C; Fig. 12

1.6

V_T

V_GT

on-state voltage

gate trigger voltage

1.3

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 13

V_D= 600 V; I_T= 0.1 A; T_j= 125 °C;

Fig. 13

0.2

I_D

off-state current

V_D= 600 V; T_j= 125 °C

0.5

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 402 V; T_j= 110 °C; (V_DM= 67%

100

V/µs

voltage

of V_DRM); exponential waveform; gate

open circuit; Fig. 14

dV_com/dt

rate of change of

V_D= 400 V; T_j= 110 °C; dI_com/

commutating voltage

dt = 0.44 A/ms; gate open circuit

Z0107MN0

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Product data sheet

15 September 2018

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1...5 6 789 10 11...14

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