Z0107MN0,135

更新时间： 2024-01-21 23:18:36

品牌	Logo	应用领域
恩智浦 - NXP		栅极触发装置可控硅三端双向交流开关电机
页数	文件大小	规格书
16页	211K
描述
4Q Triac General purpose low power motor control

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技术参数
数据手册

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Z0107MN0,135 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
Factory Lead Time：	6 weeks	风险等级：	1.53
Is Samacsys：	N	触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：	1

Z0107MN0,135 数据手册

Z0107MN0

NXP Semiconductors

4Q Triac

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DRM

Parameter

Conditions

Min

Max

600

Unit

repetitive peak off-state voltage

RMS on-state current

I_T(RMS)

full sine wave; T_sp≤ 103 °C; see Figure 3;

see Figure 1; see Figure 2

I_TSM

non-repetitive peak on-state

current

full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

see Figure 4; see Figure 5

12.5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

t_p= 10 ms; sine-wave pulse

13.8

0.78

A²s

I²t

I²t for fusing

dI_T/dt

rate of rise of on-state current

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs;

T2+ G+

A/µs

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs;

T2+ G-

A/µs

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs;

T2- G-

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs;

T2- G+

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

T_stg

T_j

°C

average gate power

storage temperature

junction temperature

over any 20 ms period

0.1

150

125

-40

003aac269

003aac270

1.2

I_T(RMS)

(A)

I_T(RMS)

(A)

0.8

0.4

10^-2

10^-1

-50

100

150

_sp(°C)

surge duration (s)

Fig 1. RMS on-state current as a function of surge

duration; maximum values

Fig 2. RMS on-state current as a function of solder

point temperature; maximum values

Z0107MN0

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 01 — 3 January 2011

3 of 16

1 234 5 6 7...16

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