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Z0107MN PDF预览

Z0107MN

更新时间: 2024-01-21 23:41:59
品牌 Logo 应用领域
安森美 - ONSEMI 栅极可控硅三端双向交流开关光电二极管
页数 文件大小 规格书
8页 172K
描述
Sensitive Gate Triac Series Silicon Bidirectional Thyristors

Z0107MN 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.07
Is Samacsys:N其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:5 mA最大直流栅极触发电压:1.5 V
最大维持电流:10 mAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大漏电流:0.01 mA
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大均方根通态电流:1 A
断态重复峰值电压:700 V子类别:TRIACs
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

Z0107MN 数据手册

 浏览型号Z0107MN的Datasheet PDF文件第1页浏览型号Z0107MN的Datasheet PDF文件第3页浏览型号Z0107MN的Datasheet PDF文件第4页浏览型号Z0107MN的Datasheet PDF文件第5页浏览型号Z0107MN的Datasheet PDF文件第6页浏览型号Z0107MN的Datasheet PDF文件第7页 
Z0103MN, Z0107MN, Z0109MN  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Peak Repetitive Blocking Current  
T = 25°C  
T = +125°C  
I
, I  
5.0  
500  
mA  
mA  
J
DRM RRM  
(V = Rated V  
, V  
; Gate Open)  
D
DRM RRM  
J
ON CHARACTERISTICS  
Peak OnState Voltage  
V
TM  
1.56  
V
(I = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)  
TM  
Gate Trigger Current (Continuous dc)  
Z0103MN  
Z0107MN  
Z0109MN  
I
I
I
mA  
GT  
(V = 12 Vdc, R = 30 Ohms)  
D
L
MT2(+), G(+)  
0.15  
0.15  
0.15  
0.25  
3.0  
3.0  
3.0  
5.0  
MT2(+), G()  
MT2(), G()  
MT2(), G(+)  
Gate Trigger Current (Continuous dc)  
mA  
mA  
GT  
GT  
(V = 12 Vdc, R = 30 Ohms)  
D
L
MT2(+), G(+)  
0.15  
0.15  
0.15  
0.25  
5.0  
5.0  
5.0  
7.0  
MT2(+), G()  
MT2(), G()  
MT2(), G(+)  
Gate Trigger Current (Continuous dc)  
(V = 12 Vdc, R = 30 Ohms)  
D
L
MT2(+), G(+)  
0.15  
0.15  
0.15  
0.25  
10  
10  
10  
10  
MT2(+), G()  
MT2(), G()  
MT2(), G(+)  
Latching Current (V = 12 V, I = 1.2 x I  
MT2(+), G(+) All Types  
MT2(+), G() All Types  
MT2(), G() All Types  
MT2(), G(+) All Types  
)
GT  
)
GT  
)
GT  
Z0103MN  
Z0107MN  
Z0109MN  
I
L
I
L
I
L
mA  
mA  
mA  
D
G
7.0  
15  
7.0  
7.0  
Latching Current (V = 12 V, I = 1.2 x I  
D
G
MT2(+), G(+) All Types  
10  
20  
10  
10  
MT2(+), G() All Types  
MT2(), G() All Types  
MT2(), G(+) All Types  
Latching Current (V = 12 V, I = 1.2 x I  
D
G
MT2(+), G(+) All Types  
15  
25  
15  
15  
MT2(+), G() All Types  
MT2(), G() All Types  
MT2(), G(+) All Types  
Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 30 Ohms)  
V
1.3  
V
V
D
L
GT  
Gate NonTrigger Voltage (V = 12 V, R = 30 Ohms, T = 125°C)  
V
GD  
0.2  
D
L
J
All Four Quadrants  
Holding Current  
D
(Z0103MA)  
(Z0107MA, Z0109MA)  
I
H
7.0  
10  
mA  
(V = 12 Vdc, Initiating Current = 50 mA, Gate Open)  
DYNAMIC CHARACTERISTICS  
Rate of Change of Commutating Current  
di/dt(c)  
dv/dt  
1.6  
A/ms  
(V = 400 V, I = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,  
D
TM  
T = 110°C, f = 250 Hz, with Snubber)  
J
Critical Rate of Rise of OffState Voltage (V = 67% Rated V  
, Exponential  
DRM  
V/ms  
D
Waveform, Gate Open, T = 110°C)  
Z0103MN  
Z0107MN  
Z0109MN  
10  
20  
50  
30  
60  
75  
J
Repetitive Critical Rate of Rise of OnState Current, T = 125°C  
di/dt  
20  
A/ms  
J
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz  
http://onsemi.com  
2

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