Z0103MN, Z0107MN, Z0109MN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
T = 25°C
T = +125°C
I
, I
−
−
−
−
5.0
500
mA
mA
J
DRM RRM
(V = Rated V
, V
; Gate Open)
D
DRM RRM
J
ON CHARACTERISTICS
Peak On−State Voltage
V
TM
−
−
1.56
V
(I = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
TM
Gate Trigger Current (Continuous dc)
Z0103MN
Z0107MN
Z0109MN
I
I
I
mA
GT
(V = 12 Vdc, R = 30 Ohms)
D
L
MT2(+), G(+)
0.15
0.15
0.15
0.25
−
−
−
−
3.0
3.0
3.0
5.0
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Current (Continuous dc)
mA
mA
GT
GT
(V = 12 Vdc, R = 30 Ohms)
D
L
MT2(+), G(+)
0.15
0.15
0.15
0.25
−
−
−
−
5.0
5.0
5.0
7.0
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Current (Continuous dc)
(V = 12 Vdc, R = 30 Ohms)
D
L
MT2(+), G(+)
0.15
0.15
0.15
0.25
−
−
−
−
10
10
10
10
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Latching Current (V = 12 V, I = 1.2 x I
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
)
GT
)
GT
)
GT
Z0103MN
Z0107MN
Z0109MN
I
L
I
L
I
L
mA
mA
mA
D
G
−
−
−
−
−
−
−
−
7.0
15
7.0
7.0
Latching Current (V = 12 V, I = 1.2 x I
D
G
MT2(+), G(+) All Types
−
−
−
−
−
−
−
−
10
20
10
10
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
Latching Current (V = 12 V, I = 1.2 x I
D
G
MT2(+), G(+) All Types
−
−
−
−
−
−
−
−
15
25
15
15
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 30 Ohms)
V
−
−
−
1.3
V
V
D
L
GT
Gate Non−Trigger Voltage (V = 12 V, R = 30 Ohms, T = 125°C)
V
GD
0.2
−
D
L
J
All Four Quadrants
Holding Current
D
(Z0103MA)
(Z0107MA, Z0109MA)
I
H
−
−
−
−
7.0
10
mA
(V = 12 Vdc, Initiating Current = 50 mA, Gate Open)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
di/dt(c)
dv/dt
1.6
−
−
A/ms
(V = 400 V, I = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
D
TM
T = 110°C, f = 250 Hz, with Snubber)
J
Critical Rate of Rise of Off−State Voltage (V = 67% Rated V
, Exponential
DRM
V/ms
D
Waveform, Gate Open, T = 110°C)
Z0103MN
Z0107MN
Z0109MN
10
20
50
30
60
75
−
−
−
J
Repetitive Critical Rate of Rise of On−State Current, T = 125°C
di/dt
−
−
20
A/ms
J
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
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