Datasheet > Z0107MA0,412

Z0107MA0,412

更新时间： 2024-02-27 11:18:51

品牌	Logo	应用领域
恩智浦 - NXP		栅三端双向交流开关栅极
页数	文件大小	规格书
13页	188K
描述
Z0107MA0

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Z0107MA0,412 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
Factory Lead Time：	6 weeks	风险等级：	1.56
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC	Base Number Matches：	1

Z0107MA0,412 数据手册

NXP Semiconductors

Z0107MA0

4Q Triac

7. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DRM

Parameter

Conditions

Min

Max

600

Unit

repetitive peak off-state voltage

RMS on-state current

I_T(RMS)

full sine wave; T_lead≤ 45 °C; Fig. 1;

Fig. 2; Fig. 3

I_TSM

non-repetitive peak on-state

current

full sine wave; T_j(init)= 25 °C;

t_p= 20 ms; Fig. 4; Fig. 5

12.5

13.8

full sine wave; T_j(init)= 25 °C;

t_p= 16.7 ms

I²t

I²t for fusing

A²s

t_p= 10 ms; SIN

0.78

dI_T/dt

rate of rise of on-state current

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/

µs; T2+ G+

A/µs

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/

µs; T2+ G-

A/µs

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/

µs; T2- G-

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/

µs; T2- G+

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

T_stg

T_j

°C

average gate power

storage temperature

junction temperature

over any 20 ms period

0.1

150

125

-40

Z0107MA0

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Product data sheet

23 August 2013

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