Datasheet > Z0107MA0,412

Z0107MA0,412

更新时间： 2024-02-05 12:51:01

品牌	Logo	应用领域
恩智浦 - NXP		栅三端双向交流开关栅极
页数	文件大小	规格书
13页	188K
描述
Z0107MA0

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Z0107MA0,412 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
Factory Lead Time：	6 weeks	风险等级：	1.56
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC	Base Number Matches：	1

Z0107MA0,412 数据手册

NXP Semiconductors

Z0107MA0

4Q Triac

9. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

I_GTgate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

0.3

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 7

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 8

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 1 A; T_j= 25 °C; Fig. 10

1.6

V_T

V_GT

on-state voltage

gate trigger voltage

1.3

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 11

V_D= 600 V; I_T= 0.1 A; T_j= 125 °C;

Fig. 11

0.2

I_D

off-state current

V_D= 600 V; T_j= 125 °C

0.5

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 402 V; T_j= 110 °C; (V_DM= 67%

100

V/µs

voltage

of V_DRM); exponential waveform; gate

open circuit; Fig. 12

dV_com/dt

rate of change of

V_D= 400 V; T_j= 110 °C; dI_com/

commutating voltage

dt = 0.44 A/ms; gate open circuit

Z0107MA0

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Product data sheet

23 August 2013

7 / 13

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