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Z0107MARLRPG PDF预览

Z0107MARLRPG

更新时间： 2024-11-29 05:54:59
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅三端双向交流开关
页数 文件大小 规格书
10页 190K
描述
Sensitive Gate Triacs Series Silicon Bidirectional Thyristors

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中文翻译

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Z0107MARLRPG 技术参数

是否无铅：不含铅生命周期：End Of Life
零件包装代码：TO-92包装说明：CYLINDRICAL, O-PBCY-W3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.30.00.80
Factory Lead Time：1 week风险等级：5.71
Is Samacsys：N其他特性：SENSITIVE GATE
配置：SINGLE关态电压最小值的临界上升速率：20 V/us
最大直流栅极触发电流：5 mA最大直流栅极触发电压：1.3 V
最大维持电流：10 mAJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-W3JESD-609代码：e1
最大漏电流：0.5 mA元件数量：1
端子数量：3最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
认证状态：Not Qualified最大均方根通态电流：1 A
断态重复峰值电压：600 V子类别：TRIACs
表面贴装：NO端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：WIRE端子位置：BOTTOM
触发设备类型：4 QUADRANT LOGIC LEVEL TRIACBase Number Matches：1

Z0107MARLRPG 数据手册

 浏览型号Z0107MARLRPG的Datasheet PDF文件第2页浏览型号Z0107MARLRPG的Datasheet PDF文件第3页浏览型号Z0107MARLRPG的Datasheet PDF文件第4页浏览型号Z0107MARLRPG的Datasheet PDF文件第5页浏览型号Z0107MARLRPG的Datasheet PDF文件第6页浏览型号Z0107MARLRPG的Datasheet PDF文件第7页 
Z0103MA, Z0107MA,  
Z0109MA  
Sensitive Gate Triacs  
Series  
Silicon Bidirectional Thyristors  
Designed for use in solid state relays, MPU interface, TTL logic and  
any other light industrial or consumer application. Supplied in an  
inexpensive TO−92 package which is readily adaptable for use in  
automatic insertion equipment.  
http://onsemi.com  
TRIACS  
1.0 AMPERE RMS  
600 VOLTS  
Features  
• One−Piece, Injection−Molded Package  
• Blocking Voltage to 600 V  
• Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all  
possible Combinations of Trigger Sources, and especially for Circuits  
that Source Gate Drives  
MT2  
MT1  
G
• All Diffused and Glassivated Junctions for Maximum Uniformity of  
Parameters and Reliability  
• Improved Noise Immunity (dv/dt Minimum of 10 V/msec at 110°C)  
• Commutating di/dt of 1.6 A/msec at 110°C  
• High Surge Current of 8 A  
1
1
2
2
3
3
BENT LEAD  
• These are Pb−Free Devices  
STRAIGHT LEAD  
BULK PACK  
TAPE & REEL  
AMMO PACK  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
TO−92 (TO−226AA)  
Rating  
Symbol Value  
Unit  
CASE 029  
STYLE 12  
Peak Repetitive Off-State Voltage  
V
DRM,  
600  
1.0  
8.0  
V
(1)  
(T = −40 to +125°C)  
V
RRM  
J
MARKING DIAGRAM  
Sine Wave 50 to 60 Hz, Gate Open  
On-State RMS Current  
Full Cycle Sine Wave 50 to 60 Hz  
I
A
A
T(RMS)  
Z01  
10xMA  
YWW G  
G
(T = +50°C)  
C
Peak Non−Repetitive Surge Current  
One Full Cycle, Sine Wave 60 Hz  
I
TSM  
(T = 110°C)  
C
2
2
1
2 3  
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
0.35  
1.0  
A s  
x
Y
WW  
G
= 3,7,9  
= Year  
= Work Week  
Average Gate Power (T = 80°C, t v 8.3 ms)  
P
W
A
C
G(AV)  
Peak Gate Current (t v 20 ms, T = +125°C)  
I
1.0  
J
GM  
= Pb−Free Package  
Operating Junction Temperature Range  
T
J
−40 to  
+125  
°C  
(Note: Microdot may be in either location)  
Storage Temperature Range  
T
stg  
−40 to  
+150  
°C  
PIN ASSIGNMENT  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
2
3
Main Terminal 1  
Gate  
Main Terminal 2  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009− Rev. 2  
Z0103MA/D  
1234567...10

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