Datasheet > YJG220G03AJR

YJG220G03AJR

更新时间： 2024-03-03 10:10:02

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
8页	697K
描述
PDFN5060-8L

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YJG220G03AJR 数据手册

YJG220G03AJR

Electrical Characteristics (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BV_DSS

V_GS= 0V, I_D=250μA

V_DS=30V, V_GS=0V

V_DS=30V, V_GS=0V, Tj=150℃

V_GS= ±20V, V_DS=0V

V_DS= V_GS, I_D=250μA

V_GS=10V, I_D=110A

V_GS=10V, I_D=20A

V_GS=4.5V, I_D=20A

I_S=110A, V_GS=0V

f=1MHz

Zero Gate Voltage Drain Current

I_DSS

μA

100

±100

2.5

0.9

1.8

1.3

Gate-Body Leakage Current

Gate Threshold Voltage

I_GSS

V_GS(th)

1.2

1.8

0.7

0.65

1.1

0.85

1.4

Static Drain-Source On-Resistance

R_DS(ON)

mΩ

Diode Forward Voltage

Gate resistance

V_SD

R_G

I_S

Maximum Body-Diode Continuous Current

Dynamic Parameters

Input Capacitance

220

C_iss

C_oss

C_rss

9600

5600

230

Output Capacitance

V_DS=15V, V_GS=0V, f=100KHz

Reverse Transfer Capacitance

Switching Parameters

Total Gate Charge

Q_g

Q_gs

Q_gd

Q_rr

t_rr

103

Gate-Source Charge

Gate-Drain Charge

V_GS=10V, V_DS=15V, I_D=50A

I_F=50A, di/dt=100A/us

Reverse Recovery Charge

Reverse Recovery Time

Turn-on Delay Time

t_D(on)

t_r

t_D(off)

t_f

Turn-on Rise Time

V_GS=10V, V_DD=15V, I_D=50A

R_GEN=3Ω

Turn-off Delay Time

Turn-off fall Time

A. Repetitive rating; pulse width limited by max. junction temperature.

B. T_J=25℃, V_DD=25V, V_G=10V, R_G=25Ω, L=2mH, IAS=26A.

C. P_dis based on max. junction temperature, using junction-case thermal resistance.

D. The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2oz. Copper, in the still air environment with T_A=25℃.

The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design.

2 / 8

S-E301

Rev.1.0,24-Feb-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

123 4 5 6 7 8

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