RoHS
COMPLIANT
YJG50P04AJQ
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-40V
● ID
-50A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<13mΩ
<19mΩ
General Description
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
● Part no. with suffix ”Q” means AEC-Q101 qualified
Applications
● Power switching application
● Uninterruptible power supply
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
-40
±20
-8
V
V
TA=25℃
-5
TA=100℃
TC=25℃
Drain Current
ID
A
-50
-31
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
-200
225
2.2
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
0.9
Total Power Dissipation C
PD
W
83
33
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
45
Max
55
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
1.2
1.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJG50P04AJQ
F1
YJG50P04AJ
5000
10000
100000
13“ reel
1 / 7
S-D379
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.1,14-Dec-23