Datasheet > YEU16D6053A5V

YEU16D6053A5V

更新时间： 2025-09-16 18:54:19

品牌	Logo	应用领域
元耀 - YENYO		/
页数	文件大小	规格书
3页	355K
描述
Family : ESD; Status : Active; Package : DFN1616-6; Configuration : Uni-Dir; AEC-Q101 : No; VRWM (V) : 5; IR Max. (μA) : 0.5; VBR Min. (V) : 6.0; CJ Typ. (pF) : 0.4; IPP @ 8/20μs (A) : 3.5; PPP (W) : 30;

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YEU16D6053A5V 数据手册

YEU16D6053A5V

ESD Protection Diode

YENYO

Features

■

30Watts peak pulse power (tp = 8/20μs)

DFN1616-6 Package

Unidirectional configurations

Solid-state silicon-avalanche technology

Low clamping voltage

Low leakage current

Low capacitance (0.2pF typical I/O to I/O)

ESD Protection for high-speed data lines to:

IEC 61000-4-2 ±8KV contact ±15KV air

IEC 61000-4-4 (EFT) 40A (5/50ns)

IEC 61000-4-5 (Lightning) 3.5A (8/20μs)

I/O4

VCC

I/O3

GND

I/O1

GND

I/O1

GND

Mechanical Data

■

Case: DFN1616-6 (plastic package).

Applications

Lead free; RoHS compliant; Halogen free

■

USB 2.0/3.0

■

Molding Compound Flammability Rating:

UL 94 V-0

Video Line Protection

Analog Video

■

Terminals: High temperature soldering guaranteed:

260 °C/10 sec. at terminals

LAN/WAN equipment

Microcontroller Input Protection

Absolute Maximum Ratings

Ratings at 25 °C, ambient temperature unless otherwise specified

Parameter

Symbol

Value

Unit

Peak Pulse Power (T_P=8/20μS)

ESD contact/air discharge (IEC-61000-4-2)

Peak Pulse Current ( tP = 8/20μS )

Junction Temperature

P_PP

V_ESD

I_PP

8/15

3.5

T_J

-55 to +125

-55 to +150

℃

Storage temperature

T_STG

Electrical Characteristics

(T_A= 25 °C unless otherwise specified)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Reverse stand-off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage(SURGE)

V_RWM

V_BR

I_R

I_T=1mA

V_R=5V

0.5

V_C

0.2

0.4

I_PP=3.5A，T_P=8/20μS

V_R=0V,f=1MHz, I/O to I/O

V_R=0V,f=1MHz, I/O to GND

C_J

Junction Capacitance

1 / 3

12 3

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