PWB
Vishay Electro-Films
Thin Film Power Resistors
FEATURES
• Wire bondable
Product may not
• Power: 1 W
be to scale
• Chip size: 0.070 inches square
• Resistance range: 0.3 Ω to 20 kΩ
• Oxidized silicon substrate for good power dissipation
• Resistor material: Tantalum nitride, self-passivating
The PWB series resistor chips offer a 1 W power rating in a
relatively small size. They offer one of the best combinations
of size and power available.
The PWBs are manufactured using Vishay Electro-Films
(EFI) sophisticated thin film equipment and manufacturing
technology. The PWBs are 100 % electrically tested and
visually inspected to MIL-STD-883.
APPLICATIONS
The PWB resistor chips are used mainly in higher power circuits of amplifiers where increased power loads require a more
specialized resistor.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES
Tightest Standard Tolerance Available
2 % ꢃ %
5.2 %
PROCESS CODE
CLASS H*
001
CLASS K*
005
25 ꢁꢁmꢂ/C
ꢃ55 ꢁꢁmꢂ/C
ꢀ25 ꢁꢁmꢂ/C
000
004
*
008
009
*MIL-PRF-38534 inspection criteria
5.3 Ω
ꢀ Ω ꢃ5 Ω 25 Ω
ꢃ5 kΩ
ꢀ5 kΩ
*
ꢄ55 ꢁꢁmꢂC R ꢅ ꢀ Ω
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Noise, MIL-STD-ꢀ5ꢀ, Method 358
ꢃ55 Ω - ꢀ25 kΩ
ꢅ ꢃ55 Ω or > ꢀ2ꢃ kΩ
- 35 dB typ.
- 20 dB typ.
MoistureResistance, MIL-STD-ꢀ5ꢀ
Method ꢃ5ꢄ
0.5 % max. ΔR/R
Stability, ꢃ555 h, + ꢃꢀ2 /C, 255 mW
0.5 % max. ΔR/R
Oꢁerating Temꢁerature Range
- 55 °C to + 125 °C
Thermal Shock, MIL-STD-ꢀ5ꢀ,
Method ꢃ57, Test Condition F
0.1 % max. ΔR/R
High Temꢁerature Exꢁosure, + ꢃ25 /C, ꢃ55 h
Dielectric Voltage Breakdown
Insulation Resistance
0.2 % max. ΔR/R
200 V
1012 min.
Oꢁerating Voltage
Steady State
2 x Rated Power
100 V max.
200 V max.
DC Power Rating at + 75 /C (Derated to Zero at + ꢃ72 /C)
(Conductive Eꢁoxy Die Sttach to Alumina Substrate)
1 W
2 x Rated Power Short-Time Overload, + ꢀ2 /C, 2 s
0.25 % max. ΔR/R %
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For technical questions, contact: efi@vishay.com
Document Number: 61021
Revision: 12-Mar-08