XPD57030S

更新时间： 2024-10-03 22:11:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
4页	50K
描述
RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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中文翻译

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技术参数
数据手册

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XPD57030S 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Is Samacsys：	N
Base Number Matches：	1

XPD57030S 数据手册

PD57030

PD57030S

RF POWER TRANSISTORS

LdmoST

The

Plastic FAMILY

TARGET DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 30 W with 13 dB gain @ 945 MHz / 28V

• NEW RF PLASTIC PACKAGE

PowerSO-10RF

(Formed Lead)

DESCRIPTION

ORDER CODE

PD57030

BRANDING

XPD57030

The PD57030 is a common source N-Channel, en-

hancement-mode, lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28V in common source mode at frequencies of

up to 1GHz. PD57030 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS tech-

nology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. PD57030’s su-

perior linearity performance makes it an ideal so-

lution for base station applications.

PowerSO-10RF

(Straight Lead)

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

ORDER CODE

PD57030S

BRANDING

XPD57030S

= 25 ⁰C)

ABSOLUTE MAXIMUM RATINGS(T

CASE

Parameter

Drain-Source Voltage

Symbol

Value

Unit

±20

(BR)DSS

Gate-Source Voltage

Drain Current

52.8

DISS

Power Dissipation (@ Tc = 70 C)

Max. Operating Junction Temperature

Storage Temperature

165

⁰C

-65 to 175

STG

THERMAL DATA(T

= 70 ⁰C)

CASE

Junction-Case Thermal Resistance

1.8

th(j-c)

C/W

May 2000

1/4

12 3 4

中文翻译

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