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X24F064VIT2 PDF预览

X24F064VIT2

更新时间: 2024-02-16 08:17:18
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
17页 489K
描述
EEPROM, 8KX8, Serial, CMOS, PDSO20, PLASTIC, TSSOP-20

X24F064VIT2 技术参数

生命周期:Obsolete包装说明:PLASTIC, TSSOP-20
Reach Compliance Code:unknown风险等级:5.84
其他特性:2-WIRE SERIAL FLASH最大时钟频率 (fCLK):0.1 MHz
JESD-30 代码:R-PDSO-G20长度:6.5 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:20字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:I2C
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:4.4 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

X24F064VIT2 数据手册

 浏览型号X24F064VIT2的Datasheet PDF文件第2页浏览型号X24F064VIT2的Datasheet PDF文件第3页浏览型号X24F064VIT2的Datasheet PDF文件第4页浏览型号X24F064VIT2的Datasheet PDF文件第5页浏览型号X24F064VIT2的Datasheet PDF文件第6页浏览型号X24F064VIT2的Datasheet PDF文件第7页 
APPLICATION  
NOTE  
A V A I L A B L E  
AN76 • AN78 • AN81 • AN87  
64K/32K/16K  
8K/4K/2K x 8 Bit  
X24F064/032/016  
SerialFlashMemory with Block LockProtection  
FEATURES  
DESCRIPTION  
• 1.8V to 3.6V or 5V “Univolt” Read and Program  
Power Supply Versions  
• Low Power CMOS  
The X24F064/032/016 is a CMOS SerialFlash Memory  
Family, internally organized 8K/4K/2K x 8. The family  
features a serial interface and software protocol allow-  
ing operation on a simple two wire bus.  
—Active read current less than 1mA  
—Active program current less than 3mA  
—Standby current less than 1µA  
• Internally Organized 8K/4K/2K x 8  
• New Programmable Block Lock Protection  
—Software write protection  
—Programmable hardware write protect  
• Block Lock (0, 1/4, 1/2, or all of the Flash Memory  
Array)  
Device select inputs (S , S , S ) allow up to eight  
0
1
2
devices to share a common two wire bus.  
A Program Protect Register accessed at the highest  
address location, provides three new programming pro-  
tection features: Software Programming Protection, Block  
Lock Protection, and Hardware Programming Protection.  
The Software Programming Protection feature prevents  
any nonvolatile writes to the device until the WEL bit in  
• 2 Wire Serial Interface  
TM  
• Bidirectional Data Transfer Protocol  
• 32 Byte Sector Programming  
• Self Timed Program Cycle  
Typical programming time of 5ms per sector  
• High Reliability  
—Endurance: 100,000 cycles per byte  
—Data retention: 100 years  
• Available Packages  
—8-lead PDIP  
—8-lead SOIC (JEDEC)  
—14-lead TSSOP (X24F032/016)  
—20-lead TSSOP (X24F064)  
the program protect register is set. The Block Lock Pro-  
tection feature allows the user to individually protect four  
blocks of the array by programming two bits in the pro-  
gramming protect register. The Programmable Hardware  
Program Protect feature allows the user to install each  
device with PP tied to V , program the entire memory  
CC  
array in place, and then enable the hardware program-  
ming protection by programming a PPEN bit in the pro-  
gram protect register. After this, selected blocks of the  
array, including the program protect register itself, are  
permanently protected from being programmed.  
Xicor SerialFlash Memories are designed and tested for  
applications requiring extended endurance. Inherent  
data retention is greater than 100 years.  
BLOCK DIAGRAM  
Data Register  
SDA  
Sector Decode Logic  
SCL  
32  
8
X
Command  
Decode  
and  
Decode  
Logic  
Sectored  
Memory  
Array  
S /S  
0
Control Logic  
0
1
S /S  
1
Program  
Protect  
Register  
S /S  
2
2
High Voltage  
Control  
Programming Control Logic  
PP  
SerialFlashMemory and Block Lock™  
Protection are trademarks of Xicor, Inc.  
Xicor, Inc. 2000 Patents Pending  
6686-3.8 11/4/03 EP  
Characteristics subject to change without notice. 1 of 17  

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