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WSF512K16-72G2MA PDF预览

WSF512K16-72G2MA

更新时间: 2024-01-14 00:17:14
品牌 Logo 应用领域
美高森美 - MICROSEMI 静态存储器内存集成电路
页数 文件大小 规格书
11页 999K
描述
Memory Circuit, 512KX16, CMOS, CQFP68, 22 X 22 MM, HERMETIC SEALED, CERAMIC, QFP-68

WSF512K16-72G2MA 技术参数

生命周期:Transferred包装说明:22 MM SQUARE, HERMETIC SEALED, CERAMIC, QFP-68
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:N其他特性:512K X 16 FLASH IS ALSO AVAILABLE
JESD-30 代码:S-CQFP-G68内存密度:8388608 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
功能数量:1端子数量:68
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:512KX16
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLATPACK认证状态:Not Qualified
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:GULL WING端子位置:QUAD
Base Number Matches:1

WSF512K16-72G2MA 数据手册

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WSF512K16-XXX  
512KX16 SRAM / NOR FLASH MODULE (SMD 5962-96901*)  
FEATURES  
FLASH MEMORY FEATURES  
 Access Times of 35ns (SRAM) and 90ns (FLASH)  
 Access Times of 70ns (SRAM) and 120ns (FLASH)  
 Packaging  
 100,000 Erase/Program Cycles Minimum  
 Sector Architecture  
• 8 equal size sectors of 64K bytes each  
• 66 pin, PGA Type, 1.385" square HIP, Hermetic Ceramic  
HIP (Package 402)  
• Any combination of sectors can be concurrently erased.  
Also supports full chip erase  
• 68 lead, Hermetic CQFP (G2), 22mm (0.880") square  
(Package 500). Designed to t JEDEC 68 lead 0.990”  
CQFJ footprint (FIGURE 2)  
 5 Volt Programming  
 Embedded Erase and Program Algorithms  
 Hardware Write Protection  
 512Kx16 5V SRAM  
 Page Program Operation and Internal Program Control  
 512Kx16 5V NOR FLASH  
Time.  
 Organized as 512Kx16 of SRAM and 512Kx16 of Flash  
This product is subject to change without notice.  
Memory with separate Data Busses  
 Both blocks of memory are User Congurable as 1Mx8  
 Low Power CMOS  
Note: For Flash programming information and waveforms refer to Flash Programming 4M5  
Application Note AN0037.  
 Commercial, Industrial and Military Temperature Ranges  
 TTL Compatible Inputs and Outputs  
* For reference only. See table page 10  
 Built-in Decoupling Caps and Multiple Ground Pins for Low  
Noise Operation  
 Weight - 13 grams typical  
FIGURE 1 – PIN CONFIGURATION  
FOR WSF512K16-XH2X  
PIN DESCRIPTION  
FD0-15  
SD0-15  
A0-18  
Flash Data Inputs/Outputs  
SRAM Data Inputs/Outputs  
Address Inputs  
TOP VIEW  
1
12  
23  
34  
45  
56  
SWE1-2#  
SCS1-2#  
OE#  
SRAM Write Enable  
SRAM Chip Selects  
Output Enable  
SD8  
SD9  
SD10  
A13  
A14  
A15  
A16  
A18  
SD0  
SD1  
SD2  
SWE2#  
SCS2#  
GND  
SD11  
A10  
SD15  
SD14  
SD13  
SD12  
OE#  
FD8  
FD9  
V
FD15  
FD14  
FD13  
FD12  
A0  
CC  
VCC  
Power Supply  
FCS2#  
GND  
Ground  
NC  
Not Connected  
FD10 FWE2#  
FWE1-2#  
FCS1-2#  
Flash Write Enable  
Flash Chip Select  
A6  
A7  
NC  
A8  
FD11  
A3  
BLOCK DIAGRAM  
A11  
A17  
A4  
A1  
SWE1# SCS1# SWE2# SCS2# FWE1# FCS1# FWE2# FCS2#  
A12  
SWE1#  
SD7  
A5  
A2  
OE#  
A0-18  
V
CC  
A9 FWE1#  
FD7  
FD6  
FD5  
FD4  
512K x 8  
SRAM  
512K x 8  
SRAM  
512K x 8  
FLASH  
512K x 8  
FLASH  
SCS1#  
NC  
SD6  
FD0  
FCS1#  
GND  
FD3  
SD5  
FD1  
FD2  
8
8
8
8
SD3  
SD4  
FD0-7  
FD8-15  
SD0-7  
SD8-15  
11  
22  
33  
44  
55  
66  
Microsemi Corporation reserves the right to change products or specications without notice.  
June 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 8  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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