WeEn Semiconductors
WNSC6D40650CW-A
Silicon Carbide Diode
10. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
Conditions
Notes Min
Typ
Max
Unit
VF
forward current
IF = 20 A; Tj = 25 °C; per diode; Fig. 5
IF = 20 A; Tj = 150 °C; per diode; Fig. 5
IF = 20 A; Tj = 175 °C; per diode; Fig. 5
VR = 650 V; Tj = 25 °C; per diode; Fig. 6
VR = 650 V; Tj = 175 °C; per diode; Fig. 6
-
-
-
-
-
1.26
1.35
1.40
2
1.40
1.55
1.60
100
400
V
V
V
IR
reverse current
μA
μA
30
Dynamic characteristics
Qr
recovered charge
IF = 20 A; VR = 400 V; dIF/dt = 500 A/μs;
Tj = 25 °C; per diode; Fig. 7
-
48
-
nC
Cd
diode capacitance
f = 1 MHz; VR = 1 V; Tj = 25 °C; per diode
f = 1 MHz; VR = 300 V; Tj = 25 °C; per diode
f = 1 MHz; VR = 600 V; Tj = 25 °C; per diode
IR = 7.8 A; L = 5 mH; Tj(init) = 25 °C; per diode
-
1045
115
100
-
-
-
-
-
pF
pF
pF
mJ
-
-
Eas
non-repetitive
150
avalanche energy
Vo = 0.950 V; Rs = 0.0289 Ω
(1) Tj = -55 °C; typical values
(2) Tj = 0 °C; typical values
(3) Tj = 25 °C; typical values
(4) Tj = 100 °C; typical values
(5) Tj = 150 °C; typical values
(6) Tj = 175 °C; typical values
Fig. 6. Reverse leakage current as a function of reverse
voltage; typical value; per diode
Fig. 5. Forward current as a function of forward
voltage; typical values; per diode
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WNSC6D40650CW-A
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WeEn Semiconductors Co., Ltd. 2023. All rights reserved
Product data sheet
30 May 2023
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