Datasheet > WNSC2D101200D

WNSC2D101200D

更新时间： 2024-04-09 19:00:03

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瑞能 - WEEN		/
页数	文件大小	规格书
11页	490K
描述
Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high frequency switched-mode power supplies.

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WNSC2D101200D 数据手册

WeEn Semiconductors

WNSC2D101200D

Silicon Carbide Diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Notes

Values

Unit

V_RRMrepetitive peak reverse

1200

voltage

V_RWM

crest working reverse

voltage

1200

V_R

reverse voltage

1200

I_F(AV)

average forward current δ = 0.5; square-wave pulse; T_mb≤ 151 °C;

Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward

current

δ = 0.5; t_p= 25 μs; T_mb≤ 151 °C;

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse

t_p= 10 μs; T_j(init)= 25 °C; square-wave pulse

sine-wave pulse; T_j(init)= 25 °C; t_p= 10 ms

750

I²t

I²t for fusing

A²s

°C

stg

storage temperature

junction temperature

-55 to 175

T_j

I_F(AV)= I_F(RMS)× √δ

V_o= 0.997 V; R_s= 0.1192 Ω

Fig. 2. Current derating as a function of mounting base

temperature

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

WNSC2D101200D

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Product data sheet

21 June 2022

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