生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | PEAK TURN-OFF CURRENT IS 1500A |
标称电路换相断开时间: | 130 µs | 配置: | SINGLE |
最大直流栅极触发电流: | 4000 mA | JESD-30 代码: | O-CEDB-N2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 1995 A | 断态重复峰值电压: | 1800 V |
重复峰值反向电压: | 800 V | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | GATE TURN-OFF SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG15018R09 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1995 A, 1800 V, GATE TURN-OFF SCR |
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WG15018R10 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 1800V V(DRM), 1000V V(RRM), 1 Element |
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WG15018R11 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1995 A, 1800 V, GATE TURN-OFF SCR |
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WG15018R12 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 1800V V(DRM), 1200V V(RRM), 1 Element |
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WG15018R13 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 1800V V(DRM), 1300V V(RRM), 1 Element |
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WG15018R14 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 1800V V(DRM), 1400V V(RRM), 1 Element |
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WG15018R15 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 1800V V(DRM), 1500V V(RRM), 1 Element |
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WG15018R16 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 1800V V(DRM), 1600V V(RRM), 1 Element |
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WG15018R17 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 1800V V(DRM), 1700V V(RRM), 1 Element |
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WG15018SP | ETC |
获取价格 |
THYRISTOR|GTO|TO-200AE |
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