生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-MXDB-D2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | SINGLE | 最大直流栅极触发电流: | 0.004 mA |
JESD-30 代码: | O-MXDB-D2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
认证状态: | Not Qualified | 最大均方根通态电流: | 1995 A |
断态重复峰值电压: | 800 V | 重复峰值反向电压: | 1400 V |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UNSPECIFIED | 触发设备类型: | GATE TURN-OFF SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG15008R16 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 800V V(DRM), 1600V V(RRM), 1 Element | |
WG15008R20 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 800V V(DRM), 2000V V(RRM), 1 Element | |
WG15008R22 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 800V V(DRM), 200V V(RRM), 1 Element | |
WG15008R24 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1995A I(T)RMS, 800V V(DRM), 300V V(RRM), 1 Element | |
WG15008RXX | ETC |
获取价格 |
GATE TURN THYRISTORS | |
WG15008SP | ETC |
获取价格 |
THYRISTOR|GTO|TO-200AE | |
WG15008SP08 | IXYS |
获取价格 |
Symmetrical GTO SCR, 2290A I(T)RMS, 800V V(DRM), 18V V(RRM), 1 Element | |
WG15008SP10 | IXYS |
获取价格 |
Gate Turn-Off SCR, 2290A I(T)RMS, 900V V(DRM), 18V V(RRM), 1 Element | |
WG15008SP12 | IXYS |
获取价格 |
Gate Turn-Off SCR, 2290A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element | |
WG15008SP14 | IXYS |
获取价格 |
Gate Turn-Off SCR, 2290A I(T)RMS, 1100V V(DRM), 18V V(RRM), 1 Element |