生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.83 | 其他特性: | PEAK TURN-OFF CURRENT IS 1000A |
标称电路换相断开时间: | 105 µs | 配置: | SINGLE |
最大直流栅极触发电流: | 2000 mA | JESD-30 代码: | O-CEDB-N2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 980 A | 断态重复峰值电压: | 3200 V |
重复峰值反向电压: | 2200 V | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | GATE TURN-OFF SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG10032FR23 | IXYS |
获取价格 |
Gate Turn-Off SCR, 980A I(T)RMS, 3200V V(DRM), 2300V V(RRM), 1 Element |
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WG10032FR24 | IXYS |
获取价格 |
Gate Turn-Off SCR, 980A I(T)RMS, 3200V V(DRM), 2400V V(RRM), 1 Element |
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WG10032FR25 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 980 A, 3200 V, GATE TURN-OFF SCR |
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WG10032FR26 | IXYS |
获取价格 |
Gate Turn-Off SCR, 980A I(T)RMS, 3200V V(DRM), 2600V V(RRM), 1 Element |
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WG10032FR28 | IXYS |
获取价格 |
Gate Turn-Off SCR, 980A I(T)RMS, 3200V V(DRM), 2800V V(RRM), 1 Element |
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WG10032FR30 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3200V V(DRM), 3000V V(RRM), 1 Element |
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WG10032FR31 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3200V V(DRM), 3100V V(RRM), 1 Element |
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WG10032R | ETC |
获取价格 |
THYRISTOR|GTO|3.2KV V(DRM)|TO-200VAR74W |
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WG10032R03 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 3200 V, GATE TURN-OFF SCR |
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WG10032R04 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3200V V(DRM), 400V V(RRM), 1 Element |
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