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W3EG72256S202JD3SG PDF预览

W3EG72256S202JD3SG

更新时间: 2024-10-01 20:10:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
14页 238K
描述
DDR DRAM Module, 256MX72, 0.8ns, CMOS, ROHS COMPLIANT, DIMM-184

W3EG72256S202JD3SG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM,针数:184
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.63
访问模式:FOUR BANK PAGE BURST最长访问时间:0.8 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-XDMA-N184
内存密度:19327352832 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:184
字数:268435456 words字数代码:256000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256MX72
封装主体材料:UNSPECIFIED封装代码:DIMM
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
自我刷新:YES最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

W3EG72256S202JD3SG 数据手册

 浏览型号W3EG72256S202JD3SG的Datasheet PDF文件第2页浏览型号W3EG72256S202JD3SG的Datasheet PDF文件第3页浏览型号W3EG72256S202JD3SG的Datasheet PDF文件第4页浏览型号W3EG72256S202JD3SG的Datasheet PDF文件第5页浏览型号W3EG72256S202JD3SG的Datasheet PDF文件第6页浏览型号W3EG72256S202JD3SG的Datasheet PDF文件第7页 
W3EG72256S-JD3  
-AJD3  
White Electronic Designs  
PRELIMINARY*  
2GB – 2x128Mx72 DDR SDRAM REGISTERED ECC w/PLL  
FEATURES  
DESCRIPTION  
Double-data-rate architecture  
The W3EG72256S is a 2x128Mx72 Double Data Rate  
SDRAM memory module based on 1Gb DDR SDRAM  
components. The module consists of eighteen 1Gb DDR  
SDRAMs in 66 pin TSOP packages mounted on a 184 pin  
FR4 substrate. This module is structured as 2 Ranks of  
256Mx72 DDR SDRAM.  
DDR200, DDR266 and DDR333:  
• JEDEC design specications  
Bi-directional data strobes (DQS)  
Differential clock inputs (CK & CK#)  
Programmable Read Latency 2,2.5 (clock)  
Programmable Burst Length (2,4,8)  
Programmable Burst type (sequential & interleave)  
Edge aligned data output, center aligned data input.  
Auto and self refresh  
Synchronous design allows precise cycle control with the  
use of system clock. Data I/O transactions are possible on  
both edges and Burst Lengths allow the same device to be  
useful for a variety of high bandwidth, high performance  
memory system applications.  
* This product is under development, is not qualied or characterized and is subject to  
change without notice.  
Serial presence detect  
Dual Rank  
Power supply: VCC = 2.5V ± 0.20V  
JEDEC standard 184 pin DIMM package  
• Package height option:  
JD3: 30.48mm (1.20")  
AJD3: 28.70mm (1.13")  
NOTE: Consult factory for availability of:  
• RoHS compliant products  
• Vendor source control options  
• Industrial temperature option  
OPERATING FREQUENCIES  
DDR333 @CL=2.5  
DDR266 @CL=2  
133MHz  
DDR266 @CL=2  
133MHz  
DDR266 @CL=2.5  
133MHz  
DDR200 @CL=2  
100MHz  
Clock Speed  
CL-tRCD-tRP  
166MHz  
2.5-3-3  
2-2-2  
2-3-3  
2.5-3-3  
2-2-2  
Advance information: Speed may not be available.  
December 2004  
Rev. 2  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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