Datasheet > W3EG64M64ETSU335D4IMG

W3EG64M64ETSU335D4IMG

更新时间： 2024-01-04 05:14:05

品牌	Logo	应用领域
WEDC		动态存储器双倍数据速率
页数	文件大小	规格书
12页	178K
描述
512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM

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WV3EG64M64ETSU-D4

White Electronic Designs

PRELIMINARY*

512MB – 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM

FEATURES

DESCRIPTION

ꢀ

Fast data transfer rate: PC3200 & PC2700

The WV3EG64M64ETSU is a 64Mx64 Double Data Rate

SDRAM memory module based on 512Mb DDR SDRAM

components. The module consists of eight 64Mx8 DDR

SDRAMs TSOP-II packages mounted on a 200 pin FR4

substrate.

Clock speeds of 200MHz & 166MHz

Bi-directional data strobes (DQS)

Differential clock inputs (CK & CK#)

Programmable Read Latency : DDR400 (3 clock),

DDR333 (2.5 clock)

Synchronous design allows precise cycle control with the

use of system clock. Data I/O transactions are possible on

both edges and Burst Lengths allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

ꢀ

Programmable Burst Length (2, 4 or 8)

Programmable Burst type (sequential & interleave)

Edge aligned data output, center aligned data input

Auto and self refresh, 7.8µs refresh interval (8K

(64ms refresh)

ꢀ

Serial presence detect (SPD) with EEPROM

Serial presence detect with EEPROM

* This product is under development, is not qualiﬁed or characterized and is subject to

change without notice.

_CC= V_CCQ= +2.5V 0.2V (166MHz)

_CC= V_CCQ= +2.6V 0.1V (200MHz)

Gold edge contacts

JEDEC standard 200 pin, small-outline, SO-DIMM

package

•

PCB height option:

D4: 31.75 mm (1.25”) TYP

NOTE: Consult factory for availability of:

• RoHS compliant products

• Vendor source control options

• Industrial temperature option

OPERATING FREQUENCIES

DDR400@CL=3

200MHz

DDR333@CL2.5

166MHz

Clock Speed

CL-t_RCD-t_RP

3-3-3

2.5-3-3

March 2006

Rev. 0

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7...12

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