Datasheet > W19B160TBAH7H

W19B160TBAH7H

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
华邦 - WINBOND		闪存
页数	文件大小	规格书
48页	534K
描述
16Mbit, 2.7~3.6 volt CMOS flash memory

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

W19B160TBAH7H 数据手册

W19B160BT/B DATA SHEET

1. GENERAL DESCRIPTION

The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M × 8 or 1M × 16 bits.

For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one

32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (× 16) data appears on DQ15-DQ0, and

byte-wide (× 8) data appears on DQ7−DQ0. The device can be programmed and erased in-system

with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of

the W19B160B results in fast program/erase operations with extremely low current consumption. The

device can also be programmed and erased by using standard EPROM programmers.

2. FEATURES

Performance

•

2.7~3.6-volt write (program and erase) operations

Fast write operation

− Sector erase time: 0.7s (Typical)

− Chip erases time: 25 s (Typical)

− Byte/Word programming time: 5/7 µs (Typical)

Read access time: 70 ns

•

Typical program/erase cycles:

− 100K

•

Twenty-year data retention

Ultra low power consumption

− Active current (Read): 9mA (Typical)

− Active current (Program/erase): 20mA (Typical)

− Standby current: 0.2 μA (Typical)

Architecture

•

Sector erases architecture

− One 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors

− Top or bottom boot block configurations available

− Supports full chip erase

•

JEDEC standard byte-wide and word-wide pin-outs TTL compatible I/O

Manufactured on WinStack-S 0.13µm process technology

Available packages: 48-pin TSOP and 48-ball TFBGA (6x8mm)

Software Features

•

Compatible with common Flash Memory Interface (CFI) specification

− Flash device parameters stored directly on the device

− Allows software driver to identify and use a variety of different current and future Flash products

End of program detection

•

- 4 -

1 2 345 6 7...48

下载PDF

与W19B160TBAH7H相关器件

型号	品牌	描述	获取价格	数据表
W19B160TBAM7H	WINBOND	16Mbit, 2.7~3.6 volt CMOS flash memory	获取价格
W19B160TBBH7H	WINBOND	16Mbit, 2.7~3.6 volt CMOS flash memory	获取价格
W19B160TBBM7H	WINBOND	16Mbit, 2.7~3.6 volt CMOS flash memory	获取价格
W19B160TT7H7H	WINBOND	16Mbit, 2.7~3.6 volt CMOS flash memory	获取价格
W19B160TT7M7H	WINBOND	16Mbit, 2.7~3.6 volt CMOS flash memory	获取价格
W19B160TT8H7H	WINBOND	16Mbit, 2.7~3.6 volt CMOS flash memory	获取价格