Datasheet > VTS2082

VTS2082

更新时间： 2024-09-22 22:15:15

品牌	Logo	应用领域
其他 - ETC		光电二极管光电二极管
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1页	21K
描述
VTS Process Photodiodes

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VTS2082 数据手册

VTS Process Photodiodes

VTS_ _80, 82, 85

PACKAGE DIMENSIONS inch (mm)

PRODUCT DESCRIPTION

This series of planar, P on N, large area silicon

photodiodes is characterized for use in the

photovoltaic (unbiased) mode. Their excellent speed

and broadband sensitivity makes them ideal for

detecting light from a variety of sources such as

LEDs, IREDs, flashtubes, incandescent lamps,

lasers, etc. Improved shunt resistance minimizes

amplifier offset and drift in high gain systems. The

solderable contact system on these photodiodes

provides a cost effective design solution for many

applications.

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

CASE 44A

-40°C to 150°C

Series 20, 31

Series 30

ANODE (ACTIVE) SURFACE SHOWN

CATHODE IS BACKSIDE

-40°C to 105°C

Operating Temperature:

DIMENSIONS

VTS__80

VTS__82

VTS__85

-40°C to 125°C

-40°C to 105°C

Series 20, 31

Series 30

.800 (20.32)

.400 (10.16)

.400 (0.16)

.200 (5.08)

Reverse Voltage:

6.0 Volts

ACTIVE AREA

.607 (392 )

.144 (93 )

.032 (21 )

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTS curves, page 67)

VTS__80

VTS__82

VTS__85

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

UNITS

Min.

Typ.

Max.

1.0

Min.

Typ.

Max.

0.2

Min.

Typ.

Max.

0.1

I_SC

TC I_SC

I_D

Short Circuit Current

H = 1000 lux, 2850 K

H = 1000 Lux, 2850 K

H = 0, VR = 100 mV

H = 0, VR = 10 mV

H = 0, V = 0 V, 1 MHz

@ 400 nm

2.30 3.00

0.55 0.69

0.20

0.13 0.16

0.20

%/°C

µA

I_SCTemperature Coefficient

Dark Current

0.20

0.2

0.05

0.02

TC I_D

R_SH

C_J

ID Temp. Coefficient

Shunt Resistance

Junction Capacitance

Sensitivity

+11

0.3

+11

%/°C

1.2

3.0

MΩ

7.5

1.75

0.50

S_R

.18

0.20

0.70

0.60

0.18 0.20

0.16

0.18 0.20

0.04

A/W

A/(W/cm²)

A/W

Responsivity

400 nm, 0.18 A/W

925 nm

TC V

Sensitivity @ Peak

0.60

t_R/t_F

Response Time @ 1 k

Open Circuit Voltage

_OCTemperature Coefficient

Ω

Load

VR = 1 V, 830 nm

H = 1000 Lux, 2850 K

3.4

1.2

µsec

0.25 0.45

-2.6

0.25 0.45

-2.6

0.25 0.45

-2.6

Volts

TC V

mV/°C

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

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