VS-65EPS..L-M3, VS-65APS..L-M3
www.vishay.com
Vishay Semiconductors
High Voltage Input Rectifier Diode, 65 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC® - JESD 47
2
1
1
• Flexible solution for reliable AC power
rectification
2
3
3
TO-247AD 3L
Base cathode
2
TO-247AD 2L
• High surge, low VF rugged blocking diode for DC charging
stations
• AEC-Q101 qualified P/N available (VS-65EPS12LHM3,
VS-65APS12LHM3)
Base cathode
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
Cathode
3
1
3
APPLICATIONS
Anode
Anode
Anode
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
VS-65EPS..L-M3
VS-65APS..L-M3
• Input rectification for single and three phase bridge
configurations
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
PRIMARY CHARACTERISTICS
IF(AV)
65 A
VR
VF at IF
800 V, 1200 V
1.12 V
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
IFSM
1000 A
150 °C
TJ max.
Package
TO-247AD 2L, TO-247AD 3L
Single
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
65
UNITS
IF(AV)
VRRM
IFSM
VF
Sinusoidal waveform
A
V
800, 1200
1000
A
30 A, TJ = 25 °C
1.0
V
TJ
-40 to +150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-65EPS08L-M3
VS-65APS08L-M3
VS-65EPS12L-M3
VS-65APS12L-M3
800
800
900
900
1.3
1.3
1200
1200
1300
1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
TC = 121 °C, 180° conduction half sine wave
65
840
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
A
Maximum peak one cycle
non-repetitive surge current
IFSM
1000
3530
5000
50 000
Maximum I2t for fusing
I2t
A2s
Maximum I2t for fusing
I2t
A2s
Revision: 06-Jul-2018
Document Number: 95998
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000