Datasheet > VS-10BQ040-M3

VS-10BQ040-M3

更新时间： 2023-12-06 20:08:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	110K
描述
High Performance Schottky Rectifier, 1.0 A

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VS-10BQ040-M3 数据手册

VS-10BQ040-M3

Vishay Semiconductors

www.vishay.com

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

0.45

0.52

0.38

0.50

0.1

UNITS

1 A

T_J= 25 °C

2 A

Maximum forward voltage drop

See fig. 1

(1)

V_FM

1 A

T_J= 125 °C

2 A

T_J= 25 °C

T_J= 125 °C

Maximum reverse leakage current

See fig. 2

I_RM

V_R= Rated V_R

9.0

Typical junction capacitance

Typical series inductance

C_T

L_S

V_R= 5 V_DC, (test signal range 100 kHz to 1 MHz), 25 °C

Measured lead to lead 5 mm from package body

Rated V_R

115

2.0

Maximum voltage rate of charge

dV/dt

10 000

V/μs

Note

(1)

Pulse width = 300 μs, duty cycle = 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

T_J⁽¹⁾, T_Stg

-55 to +150

°C

Maximum thermal resistance,

junction to lead

(2)

R_thJL

DC operation

°C/W

Maximum thermal resistance,

junction to ambient

R_thJA

0.10

Approximate weight

Marking device

0.003

oz.

Case style SMB (DO-214AA)

Notes

dP_tot

(1)

------------- < ------------- thermal runaway condition for a diode on its own heatsink

dT_JR_thJA

(2)

Mounted 1" square PCB

Revision: 12-Apr-2018

Document Number: 93335

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

123 4 5 6

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