VN2222LL-G PDF预览

VN2222LL-G

更新时间: 2025-07-21 13:15:31
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 42K
描述
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3

VN2222LL-G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.03Is Samacsys:N
其他特性:LOW THRESHOLD配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.099 A
最大漏极电流 (ID):0.23 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):8 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

VN2222LL-G 数据手册

 浏览型号VN2222LL-G的Datasheet PDF文件第2页浏览型号VN2222LL-G的Datasheet PDF文件第3页浏览型号VN2222LL-G的Datasheet PDF文件第4页 
VN2222  
VN2224  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
ID(ON)  
BVDSS  
/
RDS(ON)  
BVDGS  
220V  
240V  
(max)  
(min)  
5.0A  
5.0A  
TO-92  
20-Pin C-Dip  
VN2222NC  
1.25  
1.25Ω  
VN2224N3  
High Reliability Devices  
Advanced DMOS Technology  
See pages 5-4 and 5-5 for MILITARY STANDARD Process  
Flows and Ordering Information.  
These enhancement-mode (normally-off) transistors utilize a  
verticalDMOSstructureandSupertex’swell-provensilicon-gate  
manufacturingprocess.Thiscombinationproducesdeviceswith  
thepowerhandlingcapabilitiesofbipolartransistorsandwiththe  
highinput impedanceandpositivetemperaturecoefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
Features  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Supertex’sverticalDMOSFETsareideallysuitedtoawiderange  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral Source-Drain diode  
High input impedance and high gain  
Package Options  
Applications  
Motor controls  
Converters  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
S
S
S
S
Amplifiers  
3
S
NC  
D1  
D2  
D3  
D4  
NC  
S
Switches  
4
G1  
G2  
G3  
G4  
S
Power supply circuits  
5
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
6
7
8
9
S
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
BVDSS  
BVDGS  
10  
S
S
S G D  
Gate-to-Source Voltage  
± 20V  
-55°C to +150°C  
300°C  
top view  
20-pin Ceramic DIP  
TO-92  
Operating and Storage Temperature  
Soldering Temperature*  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  

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