2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV)
2N5545
2N5546
2N5547
–0.5 to –4.5
–0.5 to –4.5
–0.5 to –4.5
–50
–50
–50
1.5
1.5
1.5
–50
–50
–50
5
10
15
FEATURES
BENEFITS
APPLICATIONS
D Monolithic Design
D High Slew Rate
D Tight Differential Match vs. Current
D Wideband Differential Amps
D Improved Op Amp Speed, Settling Time
D High-Speed, Temp-Compensated,
Accuracy
Single-Ended Input Amps
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D High-Speed Comparators
D Impedance Converters
D High CMRR: 100 dB
D Minimum Error with Large Input Signal
DESCRIPTION
The 2N5545/5546/5547JANTX/JANTXV are monolithic dual
n-channel JFETs designed to provide high input impedance
(IG < 50 pA) for general-purpose differential amplifiers. The
2N5545 features minimum system error and calibration (5 mV
offset maximum).
TO-71
S
G
2
1
1
3
6
4
D
1
D
2
2
5
G
1
S
2
Top View
ABSOLUTE MAXIMUM RATINGS
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dissipation :
Notes
Per Side . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
b
Total . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
Document Number: 70253
S-04031—Rev. C, 04-Jun-01
www.vishay.com
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