Datasheet > VDD20SCTA

VDD20SCTA

更新时间： 2022-04-22 15:04:24

品牌	Logo	应用领域
安纳森 - ANASEM		/
页数	文件大小	规格书
20页	1320K
描述
Low voltage, Low power, 1% High detect accuracy CMOS Voltage Detector with Delay circuit

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VDD20SCTA 数据手册

Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector

Rev. E13-01

VDD Series

ELECTRICAL CHARACTERISTICS

(Ta=25°C unless otherwise specified)

Test

Items

Operating voltage

Detection voltage

Hysteresis range

Symbol

Conditions

Min.

0.7

Typ.

Max.

Unit

circuit

DET = 1.8V ~ 6.0V

6.0

DET

VDET

×1.01

DET

HYS

DET

Ta = –40°C ~ +85°C

×0.99

DET

VDET

×0.08

×0.02

×0.05

IN=0.7V

0.1

0.4

µA

IN=1.0V

IN=2.0V

IN=3.0V

IN=4.0V

IN=5.0V

IN=6.0V

IN=1.5V

IN=2.0V

IN=3.0V

IN=4.0V

IN=5.0V

1.0

3.0

5.0

6.0

7.0

2.3

8.2

11.1

12.8

13.8

-9.5

9.5

0.6

0.7

0.8

0.9

1.0

N-ch

DS=0.5V

Output current

IOUT

CMOS P-ch

-1.5

DS=2.1V

CMOS N-ch

1.5

DS=2.1V

2.1

2.5

2.8

3.0

3.4

100

µA

Current consumption

µA

Leak current

LEAK

IN=6.0V VOUT=6.0V

DET = 1.8V ~ 6.0V

Detection voltage

temperature coefficient

∆VDET

±20

ppm/°C

∆Ta•VDET Ta = –40°C ~ +85°C

200

400

Delay time

TDLY

IN = 0.7V ~ 6.0V

REL→VOUT inversion

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