Datasheet > VDA1810NTA

VDA1810NTA

更新时间： 2022-04-22 14:56:43

品牌	Logo	应用领域
安纳森 - ANASEM		/
页数	文件大小	规格书
18页	1304K
描述
Low voltage, Low power, 1% High detect accuracy CMOS Voltage Detector

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VDA1810NTA 数据手册

Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector

Rev. E13-01

VDA Series

ELECTRICAL CHARACTERISTICS

(Ta=25°C unless otherwise specified)

Test

Items

Symbol

Conditions

Min.

0.7

Typ.

Max.

Unit

circuit

Operating voltage

DET = 0.8V ~ 6.0V

DET = 1.8V ~ 6.0V

Ta = –40°C ~ +85°C

DET = 0.8V ~ 1.7V

Ta = –40°C ~ +85°C

6.0

DET

VDET

×1.01

VDET

VHYS

DET

×0.99

Detection voltage

Hysteresis range

DET

VDET

×1.02

DET

×0.98

DET

VDET

×0.08

×0.02

×0.05

IN=0.7V

0.1

0.35

µA

IN=1.0V

IN=2.0V

IN=3.0V

IN=4.0V

IN=5.0V

IN=6.0V

IN=1.5V

IN=2.0V

IN=3.0V

IN=4.0V

IN=5.0V

1.0

2.3

8.2

3.0

N-ch

DS=0.5V

5.0

11.1

12.8

13.8

-9.5

9.5

Output current

IOUT

6.0

7.0

CMOS P-ch

-1.5

DS=2.1V

CMOS N-ch

1.5

DS=2.1V

0.6

2.1

2.5

2.8

3.0

3.4

100

0.7

µA

Current consumption

0.8

µA

0.9

µA

1.0

µA

Leak current

LEAK

IN=6.0V VOUT=6.0V

DET = 1.8V ~ 6.0V

±20

±100

0.03

ppm/°C

Ta = –40°C ~ +85°C

Detection voltage

temperature coefficient

∆VDET

∆Ta•VDET

DET = 0.8V ~ 1.7V

Ta = –40°C ~ +85°C

Delay time

TDLY

Inverts from VDR to VOUT

0.2

DR→VOUT inversion

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