Datasheet > VBT5202-M3

VBT5202-M3

更新时间： 2023-12-06 20:11:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	211K
描述
TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

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VBT5202-M3 数据手册

VT5202-M3, VFT5202-M3, VBT5202-M3, VIT5202-M3

www.vishay.com

Vishay General Semiconductor

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.58 V at I_F= 2.5 A

FEATURES

TO-220AC

ITO-220AC

• Trench MOS Schottky technology Gen 2

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for D²PAK (TO-263AB) package)

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106 (for TO-220AC, ITO-220AC, and

TO-262AA package)

VT5202

VFT5202

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

CASE

PIN 2

D²PAK (TO-362AB)

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, D²PAK (TO-263AB), and

TO-262AA

VBT5202

VIT5202

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

- halogen-free, RoHS-compliant, and

HEATSINK

commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

DESIGN SUPPORT TOOLS AVAILABLE

M3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

3D Models

Mounting Torque: 10 in-lbs max.



PRIMARY CHARACTERISTICS

I_F(AV)

5.0 A

200 V

100 A

0.65 V

175 °C

V_RRM

I_FSM

V_Fat I_F= 5.0 A (T_J= 125 °C)

T_Jmax.

TO-220AC, ITO-220AC, D²PAK

(TO-263AB), TO-262AA

Package

Circuit configuration

Single

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL VT5202 VFT5202 VBT5202 VIT5202

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Maximum DC reverse voltage

V_RRM

I_F(AV)

V_DC

200

5.0

160

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

100

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage (ITO-220AC only) from terminal to heatsink, t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

°C

Revision: 09-Apr-2019

Document Number: 87700

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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