Datasheet > VBO40-12NO6

VBO40-12NO6

更新时间： 2024-02-23 09:10:51

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管
页数	文件大小	规格书
5页	555K
描述
采用各种封装的二极管，用于1相桥配置中的主整流。

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VBO40-12NO6 数据手册

VBO40-12NO6

Ratings

Rectifier

Symbol

V_RSM

Definition

Conditions

min. typ. max. Unit

T_VJ= 25°C

T_VJ= 150°C

T_VJ= 25°C

1300

1200

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

V_RRM

I_R

reverse current

V_R=1200 V

µA

V_R=1200 V

I_F= 20 A

I_F= 40 A

I_F= 20 A

I_F= 40 A

T_C= 115°C

rectangular

1.5 mA

forward voltage drop

1.15

V_F

1.33

1.07

1.31

T_VJ

°C

125

bridge output current

T_VJ= 150°C

I_DAV

d = 0.5

0.81

V_F0

threshold voltage

slope resistance

for power loss calculation only

12.1 mΩ

1.3 K/W

K/W

r_F

thermal resistance junction to case

thermal resistance case to heatsink

R_thJC

R_thCH

P_tot

0.1

T_C= 25°C

T_VJ= 45°C

V_R= 0 V

320

345

270

295

total power dissipation

max. forward surge current

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

V_R= 400 V; f = 1 MHz

I_FSM

T_VJ= 150°C

V_R= 0 V

value for fusing

T_VJ= 45°C

V_R= 0 V

I²t

510 A²s

495 A²s

365 A²s

360 A²s

T_VJ= 150°C

V_R= 0 V

T_VJ= 25°C

C_J

junction capacitance

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191211c

123 4 5

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