Datasheet > V3PM63

V3PM63

更新时间： 2023-12-06 20:10:49

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	100K
描述
Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

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V3PM63 数据手册

V3PM63

Vishay General Semiconductor

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

Axis Title

10000

1000

100

10000

1000

100

R_thJM= 15 °C/W

0.1

T_J= 100 °C

T_J= 125 °C

T_J= 150 °C

T_J= 175 °C

R_thJA= 125 °C/W

0.01

0.001

0.0001

0.00001

0.000001

T_J= 25 °C

T_Mmeasured at cathode

terminal mount typical values

T_J= -40 °C

100 125 150 175

100

Mount Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 4 - Typical Reverse Characteristics

Axis Title

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

10000

10 000

1000

100

10000

1000

100

D = 0.8

T_J= 25 °C

f = 1.0 MHz

D = 0.5

D = 0.3

D = 0.2

V_sig= 50 mV_p-p

D = 1.0

1000

100

D = 0.1

D = t_p/T

t_p

0.1

100

Average Forward Current (A)

Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics

Fig. 5 - Typical Junction Capacitance

Axis Title

10000

1000

100

1000

100

10000

1000

100

Junction to Ambient

T_J= 175 °C

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

T_J= 25 °C

T_J= -40 °C

0.1

0.01

0.2

0.4

0.6

0.8

1.0

0.1

100

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Transient Thermal Impedance

Revision: 08-Mar-2022

Document Number: 98217

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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