Datasheet > V30D100C

V30D100C

更新时间： 2023-12-06 20:02:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	125K
描述
Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.46 V at IF = 5.0 A

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V30D100C 数据手册

V30D100C

Vishay General Semiconductor

www.vishay.com

100

Junction to ambient

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

T_J= 25 °C

T_J= -40 °C

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

100

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Fig. 6 - Typical Transient Thermal Impedance

Fig. 3 - Typical Instantaneous Forward Characteristics

100

T_J= 150 °C

Epoxy printed circuit

board FR4 copper

thickness = 70 μm

T_J= 125 °C

T_J= 100 °C

0.1

T_J= 25 °C

T_J= -40 °C

0.01

0.001

0.0001

0.00001

S (cm²)

10 20 30 40 50 60 70 80 90 100

Percent of Rated Peak Reverse Voltage (%)

Copper Pad Areas (cm²)

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 7 - Thermal Resistance Junction-to-Ambient vs.

Copper Pad Areas

10 000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

1000

100

0.1

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance

Revision: 01-Feb-2021

Document Number: 87551

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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