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V30D170C PDF预览

V30D170C

更新时间: 2023-12-06 20:07:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 105K
描述
Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

V30D170C 数据手册

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V30D170C  
Vishay General Semiconductor  
www.vishay.com  
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier  
FEATURES  
®
eSMP Series  
Available  
• Very low profile - typical height of 1.7 mm  
• Low forward voltage drop, low power losses  
K
• High efficiency operation  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
1
• AEC-Q101 qualified available  
2
Top View  
Bottom View  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
SMPD (TO-263AC)  
TYPICAL APPLICATIONS  
Anode 1  
Anode 2  
K
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
Cathodde  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMPD (TO-263AC)  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 15.0 A  
170 V  
VRRM  
Base P/N-M3  
commercial grade  
Base P/NHM3  
AEC-Q101 qualified  
-
halogen-free, RoHS-compliant, and  
IFSM  
VF at IF = 5.0 A (TA = 125 °C)  
TJ max.  
260 A  
-
halogen-free, RoHS-compliant, and  
0.66 V  
175 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 and HM3 suffix meets JESD 201 class 2 whisker test  
Package  
SMPD (TO-263AC)  
Common cathode  
Circuit configurations  
Polarity: As marked  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V30D170C  
V30D170C  
170  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
V
A
per device  
per diode  
30  
Maximum average forward rectified current  
(fig. 1)  
15  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
260  
A
(1)  
Operating junction temperature range  
Storage temperature range  
TJ  
-40 to +175  
-55 to +175  
°C  
°C  
TSTG  
Note  
(1)  
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA  
Revision: 08-Jan-2019  
Document Number: 87452  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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