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UT6716455WCA PDF预览

UT6716455WCA

更新时间: 2024-09-30 23:41:07
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器LORA
页数 文件大小 规格书
15页 173K
描述
x8 SRAM

UT6716455WCA 数据手册

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Standard Products  
UT67164 Radiation-Hardened 8K x 8 SRAM -- SEU Hard  
Data Sheet  
December 1999  
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5-volt operation  
FEATURES  
Post-radiation AC/DC performance characteristics  
guaranteed by MIL-STD-883 Method 1019 testing at  
1.0E6 rads(Si)  
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55ns maximum address access time, single-event upset less  
than 1.0E-10 errors//bit day (-55 C to 125+ C)  
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o
Asynchronous operation for compatibility with industry-  
standard 8K x 8 SRAM  
INTRODUCTION  
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TTL-compatible input and output levels  
Three-state bidirectional data bus  
Low operating and standby current  
The UT67164 SRAM is a high performance, asynchronous,  
radiation-hardened, 8K x 8 random access memory  
conforming to industry-standard fit, form, and function. The  
UT67164 SRAM features fully static operation requiring no  
external clocks or timing strobes. UTMC designed and  
implemented the UT67164 using an advanced radiation-  
hardened twin-well CMOS process. Advanced CMOS  
processing along with a device enable/disable function  
result in a high performance, power-saving SRAM. The  
combinationofradiation-hardness,fastaccesstime,andlow  
power consumption make UT67164 ideal for high-speed  
systems designed for operation in radiation environments.  
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Full military operating temperature range, -55 C to 125+ C,  
screened to specific test methods listed in Table I MIL-STD-  
883 Method 5004 for Class S or Class B  
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Radiation-hardened process and design; total dose irradiation  
testing to MIL-STD-883 Method 1019  
- Total-dose: 1.0E6 rads(Si)  
- Dose rate upset: 1.0E9 rads (Si)/sec  
- Dose rate survival: 1.0E12 rads (Si)/sec  
- Single-event upset: <1.0E-10 errors/bit-day  
Industry standard (JEDEC) 64K SRAM pinout  
Packaging options:  
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- 28-pin 100-mil center DIP (.600 x 1.2)  
- 28-pin 50-mil center flatpack (.700 x .75)  
A(12:5)  
INPUT  
ROW  
256 x 256  
DRIVERS  
DECODERS  
MEMORY ARRAY  
DATA  
INPUT  
DRIVERS  
A(4:0)  
INPUT  
DRIVERS  
COLUMN  
DECODERS  
WRITE  
COLUMN  
I/O  
CIRCUIT  
DQ(7:0)  
DATA  
READ  
CIRCUIT  
OUTPUT  
DRIVERS  
E1  
E2  
G
CHIP ENABLE  
OUTPUT ENABLE  
WRITE ENABLE  
W
Figure 1. SRAM Block Diagram  
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