是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.66 | Is Samacsys: | N |
雪崩能效等级(Eas): | 875 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 100 A |
最大漏极电流 (ID): | 100 A | 最大漏源导通电阻: | 0.0053 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 50 W |
最大脉冲漏极电流 (IDM): | 400 A | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT100N03G-TN3-R | UTC |
获取价格 |
N-CHANNEL MOSFET ARRAY FOR SWITCHING |
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UT100N03G-TND-R | UTC |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, M |
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UT100N03G-TQ2-R | UTC |
获取价格 |
100A, 30V N-CHANNEL POWER MOSFET |
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UT100N03G-TQ2-T | UTC |
获取价格 |
100A, 30V N-CHANNEL POWER MOSFET |
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UT100N03L-Q-K08-5060-R | UTC |
获取价格 |
Power Field-Effect Transistor, |
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UT100N03L-Q-TA3-T | UTC |
获取价格 |
Power Field-Effect Transistor, |
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UT100N03L-Q-TQ2-R | UTC |
获取价格 |
100A, 30V N-CHANNEL POWER MOSFET |
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UT100N03L-Q-TQ2-T | UTC |
获取价格 |
Power Field-Effect Transistor |
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UT100N03L-TA3-T | UTC |
获取价格 |
100A, 30V N-CHANNEL POWER MOSFET |
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UT100N03L-TF3-T | UTC |
获取价格 |
Power Field-Effect Transistor |
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