生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | 风险等级: | 5.66 |
雪崩能效等级(Eas): | 875 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.0053 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 400 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT100N03G-TQ2-R | UTC |
获取价格 |
100A, 30V N-CHANNEL POWER MOSFET |
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UT100N03G-TQ2-T | UTC |
获取价格 |
100A, 30V N-CHANNEL POWER MOSFET |
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UT100N03L-Q-K08-5060-R | UTC |
获取价格 |
Power Field-Effect Transistor, |
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UT100N03L-Q-TA3-T | UTC |
获取价格 |
Power Field-Effect Transistor, |
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UT100N03L-Q-TQ2-R | UTC |
获取价格 |
100A, 30V N-CHANNEL POWER MOSFET |
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UT100N03L-Q-TQ2-T | UTC |
获取价格 |
Power Field-Effect Transistor |
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UT100N03L-TA3-T | UTC |
获取价格 |
100A, 30V N-CHANNEL POWER MOSFET |
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UT100N03L-TF3-T | UTC |
获取价格 |
Power Field-Effect Transistor |
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UT100N03L-TM3-T | UTC |
获取价格 |
100A, 30V N-CHANNEL POWER MOSFET |
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UT100N03L-TN3-R | UTC |
获取价格 |
N-CHANNEL MOSFET ARRAY FOR SWITCHING |
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