Datasheet > UPD44644184F5-E37-FQ1

UPD44644184F5-E37-FQ1

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		双倍数据速率静态存储器内存集成电路
页数	文件大小	规格书
40页	366K
描述
DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165

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技术参数
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UPD44644184F5-E37-FQ1 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	15 X 17 MM, PLASTIC, BGA-165	Reach Compliance Code：	compliant
风险等级：	5.87	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e0	长度：	17 mm
内存密度：	75497472 bit	内存集成电路类型：	DDR SRAM
内存宽度：	18	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	4MX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	1.51 mm	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	TIN LEAD
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	15 mm

UPD44644184F5-E37-FQ1 数据手册

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PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

μPD44644084, 44644094, 44644184, 44644364

72M-BIT DDR II SRAM

4-WORD BURST OPERATION

Description

The μPD44644084 is a 8,388,608-word by 8-bit, the μPD44644094 is a 8,388,608-word by 9-bit, the μPD44644184 is a

4,194,304-word by 18-bit and the μPD44644364 is a 2,097,152-word by 36-bit synchronous double data rate static RAM

fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The μPD44644084, μPD44644094, μPD44644184 and μPD44644364 integrate unique synchronous peripheral circuitry

and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K

and K#.

These products are suitable for application which require synchronous operation, high speed, low voltage, high density

and wide bit configuration.

These products are packaged in 165-pin PLASTIC BGA.

Features

• 1.8 0.1 V power supply

• 165-pin PLASTIC BGA (15 x 17)

• HSTL interface

• PLL circuitry for wide output data valid window and future frequency scaling

• Pipelined double data rate operation

• Common data input/output bus

• Four-tick burst for reduced address frequency

• Two input clocks (K and K#) for precise DDR timing at clock rising edges only

• Two output clocks (C and C#) for precise flight time

and clock skew matching-clock and data delivered together to receiving device

• Internally self-timed write control

• Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.

• User programmable impedance output

• Fast clock cycle time : 3.7 ns (270 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)

• Simple control logic for easy depth expansion

• JTAG boundary scan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M18229EJ2V0DS00 (2nd edition)

Date Published February 2007 NS CP(N)

Printed in Japan

2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...40

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与UPD44644184F5-E37-FQ1相关器件

型号	品牌	获取价格	描述	数据表
UPD44644184F5-E37-FQ1-A	NEC	获取价格	IC,SYNC SRAM,DDR,4MX18,CMOS,BGA,165PIN,PLASTIC
UPD44644184F5-E40-FQ1	NEC	获取价格	4MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44644185F5-E37-FQ1	RENESAS	获取价格	IC,SYNC SRAM,DDR,4MX18,CMOS,BGA,165PIN,PLASTIC
UPD44644185F5-E37-FQ1-A	RENESAS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44644185F5-E40-FQ1	RENESAS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44644185F5-E50-FQ1	RENESAS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44644185F5-E50-FQ1-A	RENESAS	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44644362AF5-E33-FQ1-A	RENESAS	获取价格	2MX36 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44644362F5-E37-FQ1	RENESAS	获取价格	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44644362F5-E37-FQ1-A	RENESAS	获取价格	2MX36 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165

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