Datasheet > UPD44644365F5-E40-FQ1-A

UPD44644365F5-E40-FQ1-A

更新时间： 2024-10-31 08:16:59

品牌	Logo	应用领域
瑞萨 - RENESAS		双倍数据速率静态存储器内存集成电路
页数	文件大小	规格书
40页	370K
描述
IC,SYNC SRAM,DDR,2MX36,CMOS,BGA,165PIN,PLASTIC

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPD44644365F5-E40-FQ1-A 数据手册

浏览型号UPD44644365F5-E40-FQ1-A的Datasheet PDF文件第2页

浏览型号UPD44644365F5-E40-FQ1-A的Datasheet PDF文件第3页

浏览型号UPD44644365F5-E40-FQ1-A的Datasheet PDF文件第4页

浏览型号UPD44644365F5-E40-FQ1-A的Datasheet PDF文件第5页

浏览型号UPD44644365F5-E40-FQ1-A的Datasheet PDF文件第6页

浏览型号UPD44644365F5-E40-FQ1-A的Datasheet PDF文件第7页

PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

μPD44644085, 44644095, 44644185, 44644365

72M-BIT DDR II SRAM SEPARATE I/O

2-WORD BURST OPERATION

Description

The μPD44644085 is a 8,388,608-word by 8-bit, the μPD44644095 is a 8,388,608-word by 9-bit, the μPD44644185 is a

4,194,304-word by 18-bit and the μPD44644365 is a 2,097,152-word by 36-bit synchronous double data rate static RAM

fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The μPD44644085, μPD44644095, μPD44644185 and μPD44644365 integrate unique synchronous peripheral circuitry

and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K

and K#.

These products are suitable for application which require synchronous operation, high speed, low voltage, high density

and wide bit configuration.

These products are packaged in 165-pin PLASTIC BGA.

Features

• 1.8 0.1 V power supply

• 165-pin PLASTIC BGA package (15 x 17)

• HSTL interface

• PLL circuitry for wide output data valid window and future frequency scaling

• Separate independent read and write data ports

• DDR read or write operation initiated each cycle

• Pipelined double data rate operation

• Separate data input/output bus

• Two-tick burst for low DDR transaction size

• Two input clocks (K and K#) for precise DDR timing at clock rising edges only

• Two output clocks (C and C#) for precise flight time and clock skew matching-clock

and data delivered together to receiving device

• Internally self-timed write control

• Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.

• User programmable impedance output

• Fast clock cycle time : 3.7 ns (270 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)

• Simple control logic for easy depth expansion

• JTAG boundary scan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M18230EJ2V0DS00 (2nd edition)

Date Published February 2007 NS CP(N)

Printed in Japan

2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...40

中文翻译

下载PDF

与UPD44644365F5-E40-FQ1-A相关器件

型号	品牌	获取价格	描述	数据表
UPD44644365F5-E50-FQ1	RENESAS	获取价格	2MX36 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44644365F5-E50-FQ1-A	RENESAS	获取价格	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44645082F5-E40-FQ1	NEC	获取价格	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44645082F5-E40-FQ1-A	NEC	获取价格	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44645082F5-E50-FQ1	NEC	获取价格	8MX8 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44645082F5-E50-FQ1-A	NEC	获取价格	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44645084F5-E37-FQ1	RENESAS	获取价格	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44645084F5-E37-FQ1	NEC	获取价格	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44645084F5-E37-FQ1-A	NEC	获取价格	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44645084F5-E37-FQ1-A	RENESAS	获取价格	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165

与UPD44644365F5-E40-FQ1-A相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD44644365F5-E40-FQ1-A

UPD44644365F5-E40-FQ1-A 数据手册

与UPD44644365F5-E40-FQ1-A相关器件

与UPD44644365F5-E40-FQ1-A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD44644365F5-E40-FQ1-A

UPD44644365F5-E40-FQ1-A 数据手册

与UPD44644365F5-E40-FQ1-A相关器件

与UPD44644365F5-E40-FQ1-A相关文章

您还可以找

您在本页遇到什么问题？